2SC2782
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI 2SC2782
is a12.5 V epitaxial
silicon NPN transistor. Designed primarily
for VHF power amplifer application up
to175 MHz band.
PACKAGE STYLE .500 6L FLG
C
A
3
D
1
2x Ø N
FULL R
FEATURES:
•
175 MHz 12.5 V
•
P
G
= 6.4 dB at 80 W/175 MHz
•
Omnigold™
Metalization System
•
Common Emitter configuration
DIM
A
B
C
.210 / 5.33
.835 / 21.21
.200 / 5.08
.490 / 12.45
.003 / 0.08
D
E
F
G
H
I
J
K
L
M
N
.120 / 3.05
.970 / 24.64
.090 / 2.29
.150 / 3.81
B
G
2
.725/18,42
F
4
E
K
H
M INIM UM
inches / m m
M
L
J
I
M AXIM UM
inches / m m
.150 / 3.43
.045 / 1.14
.160 / 4.06
.220 / 5.59
.865 / 21.97
.210 / 5.33
.510 / 12.95
.007 / 0.18
.125 / 3.18
.725 / 18.42
.980 / 24.89
.105 / 2.67
.170 / 4.32
.285 / 7.24
.135 / 3.43
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
20 A
36 V
16 V
4.0 V
220 W @ T
C
= 25 °C
-65 °C to +175 ° C
-65 °C to +175 °C
0.68 °C/W
1 = Collecttor 2 = Base 3&4 = Emitter
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CBO
BV
EBO
h
FE
C
OB
PG
ηC
Z
IN
Z
CL
I
C
= 50 mA
I
C
= 20 mA
I
E
= 1.0 mA
T
C
= 25 °C
NONETEST
CONDITIONS
MINIMUM TYPICAL MAXIMUM
16
36
4.0
UNITS
V
V
V
V
CE
= 5.0 V
V
CB
= 12.5 V
V
CC
= 12.5 V
P
IN
= 18 W
V
CC
= 12.5 V
V
CC
= 12.5 V
I
C
= 10 A
f = 1.0 MHz
P
OUT
= 80 W
P
OUT
= 80 W
P
OUT
= 80 W
f = 175 MHz
f = 175 MHz
f = 175 MHz
10
6.4
60
---
---
6.8
70
1.0 + j1.5
1.2 + j1.8
100
390
---
pF
dB
%
---
---
Ω
Ω
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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