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AHV1001

Description
5.6 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
Categorysemiconductor    Discrete semiconductor   
File Size42KB,1 Pages
ManufacturerASI [ASI Semiconductor, Inc]
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AHV1001 Overview

5.6 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE

AHV1000 SERIES
SILICON HYPERABRUPT TUNING VARACTOR
DESCRIPTION:
The
ASI AHV1000
Series is a Silicon
Hyperabrupt Tuning Varactor in a
SOT-23
package
.
PACKAGE STYLE SOT-23
MAXIMUM RATINGS
I
R
V
P
DISS
T
J
T
SGT
100 nA @ V
R
= 20 V
22 V @ 10 µA
250 mW @ T
C
= 25 °C
-65 °C to +150 °C
-65 °C to +150 °C
ELECTRICAL CHARACTERISTICS
Model
Number
AHV1001
AHV1002
AHV1003
AHV1004
AHV1005
AHV1006
AHV1007
AHV1008
AHV1009
AHV1010
AHV1011
AHV1012
Total Capacitance
C
T4
(±10%) (pF)
f = MHz V
R
= 4.0 V
5.6
6.8
8.2
10.0
12.0
15.0
18.0
22.0
27.0
33.0
39.0
47.0
T
C
= 25 C
O
Minimum Capacitance Ratio
C
T2
/C
T20
f = 1 MHz
5.3
5.5
6.0
6.0
6.5
7.0
7.0
7.5
8.0
9.0
9.5
9.5
Minimum Q
f = 50 MHz
V
R
= 4.0 V
300
300
250
250
250
250
175
175
175
150
150
150
1. AVAILABLE AS SINGLE OR COMMON CATHODE PAIRS.
ADD SUFFIX “CC” TO MODEL NUMBER FOR COMMON CATHODE PAIRS.
Pin Configuration:
Single:
Common Cathode:
Pin #1=Anode, Pin #2=N.C., Pin #3=Cathode
Pin #1=Anode, Pin #2=Anode, Pin #3= Cathode/Cathode
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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