STD95N04
N-CHANNEL 40V - 5.1mΩ - 80A DPAK
Planar STripFET™ MOSFET
TARGET SPECIFICATION
Table 1: General Features
TYPE
STD95N04
s
s
s
Figure 1: Package
I
D
80 A (**)
Pw
110 W
V
DSS
40 V
R
DS(on)
< 6.5 mΩ
100% AVALANCHE TESTED
SURFACE-MOUNTING DPAK (TO-252)
STANDARD THRESHOLD DRIVE
3
1
DPAK
DESCRIPTION
This MOSFET is the latest refinement of STMicro-
electronic unique “Single Feature Size™“ strip-
based process. The resulting transistor shows ex-
tremely high packing density for low on-resistance,
rugged avalanche characteristics, low gate charge
and less critical aligment steps therefore a remark-
able manufacturing reproducibility. This new im-
proved device has been specifically designed for
Automotive applications.
Figure 2: Internal Schematic Diagram
APPLICATIONS
s
HIGH CURRENT,SWITCHING
APPLICATIONS
s
AUTOMOTIVE
Table 2: Order Codes
SALES TYPE
STD95N04T4
MARKING
D95N04
PACKAGE
DPAK
PACKAGING
TAPE & REEL
Rev. 1
April 2005
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
1/8
STD95N04
Table 3: Absolute Maximum ratings
Symbol
V
DS
V
GS
I
D
(**)
I
D
I
DM
( )
P
TOT
dv/dt (1)
E
AS
(2)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Gate-source Voltage
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery Voltage Slope
Single Pulse Avalanche Energy
Storage Temperature
Operating Junction Temperature
Value
40
±20
80
65
320
110
0.73
TBD
TBD
–55 to 175
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
(**) Current limited by Package.
( )
Pulse width limited by safe operating area.
(1) I
SD
≤
80A, di/dt
≤
800 A/µs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(2) Starting T
j
=25 °C, I
D
= 40 A, V
DD
= 40 V
Table 4: Thermal Data
Rthj-case
Rthj-pcb
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-pcb Max
Maximum Lead Temperature For Soldering Purpose
( for 10 sec. 1.6 mm from case)
1.36
TBD
275
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
CASE
=25°C UNLESS OTHERWISE SPECIFIED)
Table 5: On/Off
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I
D
= 250 µA, V
GS
= 0
Min.
40
10
100
± 200
2
5.1
4
6.5
Typ.
Max.
Unit
V
µA
µA
nA
V
mΩ
V
DS
= Max Rating
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125°C
Gate-body Leakage
Current (V
DS
= 0)
Static Drain-source On
Resistance
V
GS
= ±20V
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 40 A
2/8
STD95N04
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic
Symbol
g
fs
(*)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
V
DS
= 25 V, I
D
= 40 A
V
DS
= 25V, f= 1 MHz, V
GS
= 0
Min.
Typ.
TBD
2400
35
570
TBD
TBD
TBD
TBD
40
TBD
TBD
Max.
Unit
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DD
= 20 V, I
D
= 40 A
R
G
= 4.7Ω, V
GS
= 10V
(see Figure 4)
V
DD
= 32 V, I
D
= 40 A,
V
GS
= 10V
(see Figure 7)
Table 7: Source Drain Diode
Symbol
I
SD
I
SDM
(1)
V
SD
(*)
t
rr
Q
rr
I
RRM
Parameter
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 80 A, V
GS
= 0
I
SD
= 80 A, di/dt = 100 A/µs,
V
DD
= 30 V, T
j
= 150°C
(see Figure 5)
TBD
TBD
TBD
Test Conditions
Min.
Typ.
Max.
80
320
1.5
Unit
A
A
V
ns
nC
A
(*) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(1) Pulse width limited by safe operating area
3/8
STD95N04
Figure 3: Unclamped Inductive Load Test Cir-
cuit
Figure 6: Unclamped Inductive Wafeform
Figure 4: Switching Times Test Circuit For Re-
sistive Load
Figure 7: Gate Charge Test Circuit
Figure 5: Test Circuit For Inductive Load
Switching and Diode Recovery Times
4/8
STD95N04
TO-252 (DPAK) MECHANICAL DATA
mm
MIN.
A
A1
A2
B
B2
C
C2
D
E
G
H
L2
L4
V2
0.60
0
o
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
0.8
1.00
8
o
0.024
0
o
TYP.
MAX.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
MIN.
0.087
0.035
0.001
0.025
0.204
0.018
0.019
0.236
0.252
0.173
0.368
0.031
0.039
0
o
inch
TYP.
MAX.
0.094
0.043
0.009
0.035
0.213
0.024
0.024
0.244
0.260
0.181
0.398
DIM.
P032P_B
5/8
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