2SB1189 / 2SB1238
Transistors
Medium power transistor (−80V,
−0.7A)
2SB1189 / 2SB1238
Features
1) High breakdown voltage, BV
CEO
=−80V, and
high current, I
C
=−0.7A.
2) Complements the 2SD1767 / 2SD1859.
External dimensions
(Unit : mm)
2SB1189
4.0
1.0
2.5
0.5
1.5
0.4
(1)
3.0
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
2SB1189
2SB1238
Tj
Tstg
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Limits
−80
−80
−5
−0.7
0.5
2
1
150
−55
to
+150
°C
°C
W
∗1
∗2
0.5
(3)
V
V
V
A
1.5
0.4
Unit
0.4
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
∗1
When mounted on a 40×40×0.7 mm ceramic board.
∗2
Printed circuit board 1.7 mm thick, collector plating 1cm
2
or larger.
2SB1238
6.8
2.5
Packaging specifications and h
FE
Type
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
2SB1189
MPT3
QR
2SB1238
ATV
QR
−
TV2
2500
(1) (2) (3)
2.54 2.54
0.65Max.
1.0
0.9
∗
Denotes
h
BD
∗
T100
1000
0.5
1.05
14.5
4.4
1.5
0.45
FE
Taping specifications
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
−80
−80
−5
−
−
−
120
−
−
Typ.
−
−
−
−
−
−0.2
−
100
14
Max.
−
−
−
−0.5
−0.5
−0.4
390
−
20
Unit
V
V
V
µA
µA
V
−
MHz
pF
I
C
=−50µA
I
C
=−2mA
I
E
=−50µA
V
CB
=−50V
V
EB
=−4V
I
C
/I
B
=−500mA/−50mA
V
CE
/I
C
=−3V/−0.1A
V
CE
=−10V,
I
E
=50mA,
f=100MHz
V
CB
=−10V,
I
E
=0A,
f=1MHz
Conditions
Rev.A
4.5
1.6
(2)
1/2
2SB1189 / 2SB1238
Transistors
Electrical characteristics curves
−1.0
Ta=25°C
COLLECTOR CURRENT : I
C
(A)
−
5mA
−0.6
−
4mA
−3m
A
−2mA
−5
−2
−1
−0.5
−0.2
−0.1
0
−0.2
−0.4
−0.6
−0.8
−1.0
−1.2
−1.4
−1.6
DC CURRENT GAIN : h
FE
−0.8
−
7mA
−
6mA
COLLECTOR CURRENT : I
C
(mA)
−10mA
−9mA
−50
A
−
8m
−20
−10
Ta
=
25°C
V
CE
= −6V
500
Ta
=
25°C
200
100
V
CE
= −5V
−0.4
−0.2
I
B
=
0mA
−1mA
−3V
50
−1V
0
0
−2
−4
−6
−8
−10
−1
−2
−5
−10 −20
−50 −100 −200 −500
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.1 Ground emitter output characteristics
Fig.2 Ground emitter propagation characteristics
Fig.3 DC current gain vs. collector current
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR OUTPUT CAPACITANCE : C
ob
(pF)
TRANSITION FREQUENCY : f
T
(MHz)
Ta
=
25°C
−0.2
−0.1
I
C
/I
B
=20/1
Ta
=
25°C
V
CE
=
−5V
500
100
Ta=25
°C
f=1MHz
I
E
=0A
200
100
50
−0.05
Cob
20
10
I
C
/I
B
=10/1
50
−0.02
−0.01
−1
20
−5
−10 −20
−50 −100 −200 −500
2
5
10
20
50
−0.5
−1
−2
−5
−10
−20
COLLECTOR CURRENT : I
C
(mA)
EMITTER CURRENT : I
E
(mA)
COLLECTOR TO BASE VOLTAGE : V
CE
(V)
Fig.4 Collector-emitter saturation voltage
vs.collector current
Fig.5 Gain bandwidth product vs. emitter current
Fig.6 Collector output capacitance
vs. collector-base voltage
EMITTER INPUT CAPACITANCE : C
ib
(pF)
COLLECTOR CURRENT : I
C
(A)
100
Cib
Ta=25
°C
f=1MHz
I
C
=0A
−1.0
−0.5
−0.2
−0.1
−0.05
−0.02
−0.01
−0.005
−0.002
Ta
=
25°C
∗Single
pulse
−0.001
−0.1 −0.2 −0.5 −1
DC
0
=
1
Pw
Pw
∗
s
0m
=
1
s
∗
m
50
20
10
−0.5
−1
−2
−5
−10
−20
−2
−5
−10 −20
−50 −100
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.7 Emitter input capacitance
vs. emitter-base voltage
Fig.8 Safe operating area (2SB1189)
Rev.A
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
Power technology
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