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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP82N06MLG, NP82N06NLG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP82N06MLG and NP82N06NLG are N-channel MOS Field Effect Transistors designed for high current
switching applications.
ORDERING INFORMATION
PART NUMBER
NP82N06MLG-S18-AY
NP82N06NLG-S18-AY
Note
Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tube
50 p/tube
PACKAGE
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
Note
Pb-free (This product does not contain Pb in the external electrode.)
FEATURES
•
Logic level
•
Built-in gate protection diode
•
Super low on-state resistance
R
DS(on)1
= 7.4 mΩ MAX. (V
GS
= 10 V, I
D
= 41 A)
R
DS(on)2
= 9.7 mΩ MAX. (V
GS
= 5 V, I
D
= 41 A)
•
High current rating
I
D(DC)
=
±82
A
•
Low input capacitance
C
iss
= 5700 pF TYP.
•
Designed for automotive application and AEC-Q101 qualified
(TO-220)
(TO-262)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Note1
Drain Current (pulse)
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Note2
Repetitive Avalanche Current
Note2
Repetitive Avalanche Energy
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
T
ch
≤
150°C, R
G
= 25
Ω
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AR
E
AR
60
±20
±82
±270
143
1.8
175
−55
to
+175
37
137
V
V
A
A
W
W
°C
°C
A
mJ
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R
th(ch-C)
R
th(ch-A)
1.05
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19802EJ1V0DS00 (1st edition)
Date Published May 2009 NS
Printed in Japan
2009
MEMS sensors
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