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IRLML6401TR

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size329KB,10 Pages
ManufacturerCYT Opto-electronic
Download Datasheet Parametric Compare View All

IRLML6401TR Overview

Transistor

IRLML6401TR Parametric

Parameter NameAttribute value
MakerCYT Opto-electronic
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
Avalanche Energy Efficiency Rating (Eas)33 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage12 V
Maximum drain current (ID)4.3 A
Maximum drain-source on-resistance0.05 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)34 A
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
IRLML6401
l
l
l
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
SOT-23 Footprint
Low Profile (<1.1mm)
Available in Tape and Reel
Fast Switching
1.8V Gate Rated
HEXFET
®
Power MOSFET
G 1
V
DSS
= -12V
3 D
S
2
R
DS(on)
= 0.05Ω
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device design
that HEXFET
power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device
for use in battery and load management.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce
a HEXFET Power MOSFET with the industry's smallest
footprint. This package, dubbed the Micro3, is ideal for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro3 allows it
to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards. The thermal
resistance and power dissipation are the best available.
SOT23-3 package
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
E
AS
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current

Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-12
-4.3
-3.4
-34
1.3
0.8
0.01
33
± 8.0
-55 to + 150
Units
V
A
W
W/°C
mJ
V
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambientƒ
Typ.
75
Max.
100
Units
°C/W
SHENZHEN CYT OPTO-ELECTRONIC TECHNOLOGY CO.,LTD
1
www.szcyt.com

IRLML6401TR Related Products

IRLML6401TR
Description Transistor
Maker CYT Opto-electronic
package instruction SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown
Avalanche Energy Efficiency Rating (Eas) 33 mJ
Configuration SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 12 V
Maximum drain current (ID) 4.3 A
Maximum drain-source on-resistance 0.05 Ω
FET technology METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G3
Number of components 1
Number of terminals 3
Operating mode ENHANCEMENT MODE
Maximum operating temperature 150 °C
Minimum operating temperature -55 °C
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Polarity/channel type P-CHANNEL
Maximum pulsed drain current (IDM) 34 A
surface mount YES
Terminal form GULL WING
Terminal location DUAL
transistor applications SWITCHING
Transistor component materials SILICON
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