Power Transistor (−80V,
−1A)
2SB1260 / 2SB1181
Features
1) Hight breakdown voltage and high current.
BV
CEO
=
−80V,
I
C
=
−1A
2) Good h
FE
linearty.
3) Low V
CE(sat)
.
4) Complements the 2SD1898 / 2SD1733.
Dimensions
(Unit : mm)
2SB1260
4.5
+0.2
1.6±0.1
1.5±
2SB1181
1.5
±
0.3
6.5
±
0.2
5.1
+
0.2
C0.5
2.3
+
0.2
0.5
±
0.1
0.5±0.1
5.5
+
0.3
4.0
±0.3
2.5
+0.2
0.75
(1)
(2)
(3)
0.4±0.1
1.5±0.1
0.4
+0.1
0.65
±
0.1
0.9
1.0±0.2
0.55
±
0.1
2.3
±
0.2
2.3
±
0.2
1.0
±
0.2
Structure
Epitaxial planar type
PNP silicon transistor
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
(1) (2) (3)
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
Absolute
maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
2SB1260
Collector power
dissipation
2SB1181
2SB1181
Junction temperature
Storage temperature
Tj
Tstg
P
C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Limits
−80
−80
−5
−1
−2
0.5
2
1
10
150
−55
to +150
W (Tc=25
°C
)
∗2
∗1
Unit
V
V
V
A (DC)
A (Pulse)
W
°C
°C
∗
1
∗
2
2SB1260 : Pw=20ms duty=1/2
2SB1260 : When mounted on a 40
×
40
×
0.7 mm ceramic board.
Electrical
characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency 2SB1181
Output capacitance
2SB1260
2SB1181
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
−80
−80
−5
−
−
−
120
−
−
−
Typ.
−
−
−
−
−
−
−
100
20
25
Max.
−
−
−
−1
−1
−0.4
390
−
−
−
Unit
V
V
V
I
C
= −50μ
A
I
C
= −1mA
I
E
= −50μ
A
V
CB
= −60V
V
EB
= −4V
I
C
/I
B
= −500mA/ −50mA
V
CE
= −3V,
I
C
= −0.1A
V
CE
= −10V,
I
E
=50mA,
f=100MHz
V
CB
= −10V
I
E
=0A
f=1MHz
Conditions
μ
A
μ
A
V
−
MHz
pF
pF
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c
○
2012 ROHM Co., Ltd. All rights reserved.
1/2
2012.01 - Rev.G
2.5
9.5
±
0.5
0.9
1.5
2SB1260 / 2SB1181
Packaging
specifications and h
FE
Data Sheet
Package
Code
Type
2SB1260
2SB1181
h
FE
QR
QR
Basic ordering
unit (pieces)
TL
Taping
T100
1000
2500
−
−
h
FE
values are classified as follows :
Item
h
FE
Q
120 to 270
R
180 to 390
Electrical
characteristic curves
−1000
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(A)
Ta
=
25°C
V
CE
= −5V
−1.0
−0.8
−0.6
−0.4
−0.2
0
0
Ta=25°C
−4.5mA
−4mA
−3.5mA
−3mA
−2.5mA
−2mA
−1.5mA
−1mA
−0.5mA
I
B
=0mA
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0
1000
500
Ta=25°C
−100
DC CURRENT GAIN : h
FE
200
100
50
V
CE
= −3V
−1V
−10
−1
20
10
−1 −2
−0.1
0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
BASE TO EMITTER VOLTAGE : V
BE
(V)
−5 −10 −20
−50 −100 −200 −500 −1000 −2000
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.1
Grounded emitter propagation
characteristics
Fig.2
Grounded emitter output
characteristics
Fig.3
DC current gain vs.
collector current
TRANSITION FREQUENCY : f
T
(MHz)
Ta=25°C
−2
−1
−0.5
−0.2
−0.1
−0.05
−0.02
−0.01
−
1
−
2
−
5
−
10
−
20
−
50
−
100
−
200
−
500
−
1000
−
2000
COLLECTOR CURRENT : I
C
(mA)
I
C
/I
B
=20
10
500
200
100
50
20
10
5
2
1
1
2
5
10 20
Ta
=
25°C
V
CE
= −5V
COLLECTOR OUTPUT CAPACITANCE : Cob
(pF)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
1000
1000
500
200
100
50
20
10
5
2
1
−0.1
-0.2
−0.5
-1
−2
−5 −10 −20
−50 −100
Ta
=
25
°C
f
=
1MHz
I
E
=
0A
50 100 200
500 1000
EMITTER CURRENT : I
E
(mA)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.4
Collector-emitter saturation
voltage vs. collector current
Fig.5
Gain bandwidth product
vs. emitter current
Fig.6
Collector output capacitance
vs. collector-base voltage
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c
○
2012 ROHM Co., Ltd. All rights reserved.
2/2
2012.01 - Rev.G
Notice
Notes
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The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
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use of such technical information.
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Please be sure to implement in your equipment using the Products safety measures to guard
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