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NCEP85T25

Description
NCE N-Channel Super Trench Power MOSFET
File Size342KB,8 Pages
ManufacturerWuxi NCE Power Semiconductor Co., Ltd
Websitehttp://www.ncepower.com/
Download Datasheet View All

NCEP85T25 Overview

NCE N-Channel Super Trench Power MOSFET

Pb Free Product
http://www.ncepower.com
NCEP85T25
NCE N-Channel
Super Trench
Power MOSFET
Description
The NCEP85T25 uses
Super Trench
technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of R
DS(ON)
and Q
g
. This device is ideal for
high-frequency switching and synchronous rectification.
Schematic diagram
General Features
V
DS
=85V,I
D
=250A
R
DS(ON)
<2.8mΩ @ V
GS
=10V
Excellent gate charge x R
DS(on)
product
Very low on-resistance
R
DS(on)
175 °C operating temperature
Pb-free lead plating
100% UIS tested
Marking and pin assignment
Application
DC/DC Converter
Ideal for high-frequency switching and synchronous
rectification
100% UIS TESTED!
100%
∆Vds
TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
NCEP85T25
Device
NCEP85T25
Device Package
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T
C
=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(T
C
=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy
(Note 5)
Operating Junction and Storage Temperature Range
E
AS
Symbol
V
DS
V
GS
I
D
I
D
(100℃)
Limit
85
±20
250
180
800
300
2
1700
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
I
DM
P
D
T
J
,T
STG
Wuxi NCE Power Semiconductor Co., Ltd
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