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1N5362B

Description
28 V, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Categorysemiconductor    Discrete semiconductor   
File Size50KB,3 Pages
ManufacturerEIC [EIC discrete Semiconductors]
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1N5362B Overview

28 V, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

Certificate: TH97/10561QM
Certificate:
TW00/17276EM
1N5333B - 1N5388B
V
Z
: 3.3 - 200 Volts
P
D
: 5 Watts
FEATURES :
* Complete Voltage Range 3.3 to 200 Volts
* High peak reverse power dissipation
* High reliability
* Low leakage current
* Pb / RoHS Free
SILICON ZENER DIODES
D2A
0.161 (4.1)
0.154 (3.9)
1.00 (25.4)
MIN.
0.284 (7.2)
0.268 (6.8)
MECHANICAL DATA
* Case : D2A Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.645 gram
0.040 (1.02)
0.0385 (0.98)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS
Rating at 25
°
C ambient temperature unless otherwise specified
Rating
DC Power Dissipation at T
L
= 75
°C
(Note1)
Maximum Forward Voltage at I
F
= 1 A
Junction Temperature Range
Storage Temperature Range
Note :
(1) T
L
= Lead temperature at 3/8 " (9.5mm) from body
Symbol
P
D
V
F
T
J
Ts
Value
5.0
1.2
- 65 to + 200
- 65 to + 200
Unit
W
V
°C
°C
Fig. 1 POWER TEMPERATURE DERATING CURVE
5
P
D
, MAXIMUM DISSIPATION
(WATTS)
4
3
2
1
0
0
25
50
75
100
125
150
175
200
L = 3/8" (9.5mm)
T
L
, LEAD TEMPERATURE (°C)
Page 1 of 3
Rev. 07 : March 16, 2007
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