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1N5818WB

Description
SCHOTTKY BARRIER DIODES
CategoryDiscrete semiconductor    diode   
File Size37KB,1 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Download Datasheet Parametric Compare View All

1N5818WB Overview

SCHOTTKY BARRIER DIODES

1N5818WB Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Base Number Matches1
Certificate TH97/10561QM
Certificate TW00/17276EM
1N5817WB - 1N5819WB
PRV : 20 - 40 Volts
IO : 1.0 Ampere
MECHANICAL DATA :
* Case : SOD-123
* Weight : 0.01 gram (approximately)
* 1N5817WB Marking Code : A0
* 1N5818WB Marking Code : ME
* 1N5819WB Marking Code : SR
SCHOTTKY BARRIER DIODES
SOD-123
0.6
0.5
0.135
0.127
3.9
3.7
2.7
2.6
Absolute Maximum Rating
Parameter
DC Reverse Voltage
(Ta = 25 °C)
Symbol
1N5817WB
1N5818WB
1N5819WB
V
R
I
O
P
tot
T
J
T
STG
1.15
1.05
1.65
1.55
Dimensions in millimeters
Value
20
30
40
1.0
450
-55 to + 150
-55 to + 150
Unit
V
A
mW
°C
°C
Average Rectified Output Current
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Electrical Characteristics
Parameter
Reverse Breakdown Voltage
at I
R
= 1 mA
Reverse Leakage Current
(Ta = 25 °C )
Symbol
1N5817WB
1N5818WB
1N5819WB
at V
R
= 20 V
at V
R
= 30 V
at V
R
= 40 V
at V
R
= 4 V
at V
R
= 6 V
1N5817WB
1N5818WB
1N5819WB
1N5819WB
1N5819WB
1N5819WB
1N5817WB
1N5818WB
1N5819WB
at I
F
= 3.0 A
1N5817WB
1N5818WB
1N5819WB
V
F
I
R
V
BR
Min
20
30
40
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
1
1
1
0.050
0.075
0.45
0.45
0.55
0.60
0.750
0.875
0.900
120
Unit
V
mA
Forward Voltage
at I
F
= 0.1 A
at I
F
= 1.0 A
V
Diode Capacitance at V
R
= 4 V, f = 1MHz
Page 1 of 1
C
D
-
pF
Rev. 01 : August 22, 2006

1N5818WB Related Products

1N5818WB 1N5819WB
Description SCHOTTKY BARRIER DIODES SCHOTTKY BARRIER DIODES
Is it lead-free? Lead free Lead free
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Is Samacsys N N
Base Number Matches 1 1

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