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NCE15G120P
NCE15G120P
1200V, 15A, Trench NPT IGBT
Features
Trench NPT( Non Punch Through) IGBT
High speed switching
Low saturation voltage: V
CE(sat)
=2.0V@I
C
=15A
High input impedance
Applications
Inductive heating, Microwave oven, Inverter, UPS, etc.
Soft switching applications
C
General Description
Using advanced Trench NPT technology, NCE’s 1200V
IGBTs offers superior conduction and switching performances,
and easy parallel operation with exceptional avalanche rugged-
ness. This device is designed for soft switching applications.
G
E
Absolute Maximum Ratings
Symbol Description
V
CES
V
GES
I
C
I
CM
(1)
P
D
T
J
T
stg
T
L
Notes:
1. Repetitive rating, Pulse width limited by max. junction temperature
Ratings
1200
+/-30
@T
C
=25°C
@T
C
=100°C
@T
C
=25°C
@T
C
=100°C
30
15
45
220
88
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
W
W
°C
°C
°C
Collector to Emitter Voltage
Gate to Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Storage Temperature Range
Maximum Lead Temp. for soldering Purposes, 1/8" from
case for 5seconds
Operating Junction Temperature
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NCE15G120P
Typ.
-
-
Thermal Characteristics
Symbol Parameter
R
JC
Max.
0.57
40
Units
°C/W
°C/W
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R
JA
Electrical Characteristics of the IGBT
T
C
=25°C
Symbol Parameter
Off Characteristics
BV
CES
I
CES
I
GES
V
GE(th)
Collector to Emitter
Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
G-E Threshold Voltage
Collector to Emitter Saturation
Voltage
Test Conditions
Min.
1200
-
-
4.0
-
-
Typ. Max.
-
-
-
5.5
2
2.15
-
1
+/-250
7.0
2.5
-
Units
V
mA
nA
V
V
V
V
GE
=0V, Ic=1mA
V
CE
=V
CES
, V
GE
=0V
V
GE
=V
GES
, V
CE
=0V
I
C
=15mA, V
CE
=V
GE
I
C
=15A, V
GE
=15V
T
C
=25°C
I
C
=15A, V
GE
=15V
T
C
=125°C
On Characteristics
V
CE(sat)
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
V
CC
=600V,I
C
=15A,
V
GE
=15V
V
CC
=600V,I
C
=15A,
R
G
=10Ώ,V
GE
=15V,
Resistive Load,
T
C
=125°C
V
CC
=600V,I
C
=15A,
R
G
=10Ώ,V
GE
=15V,
Resistive Load,
T
C
=25°C
V
CE
=30V, V
GE
=0V,
f=1MHz
-
-
-
2350
70
45
-
-
-
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
Q
g
Q
ge
Q
gc
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
33
80
160
255
0.3
0.58
0.88
30
115
170
390
0.38
0.89
1.27
100
19
45
-
-
-
330
-
0.74
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
nC
nC
nC
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Figure 2. Typical Saturation Voltage
Characteristics
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Collector Current, I
C
(A)
Collector Emitter Voltage, V
CE
(V)
Collector Current I
C,
(A)
Collector Emitter Voltage, V
CE
(V)
Figure 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Collector Emitter Voltage, Vce(V)
Figure 4. Saturation Voltage vs. V
GE
Collector Emitter Voltage, Vce(V)
Case temperature, Tc(°C)
Gate Emitter Voltage, V
GE
( V)
Figure 5. Saturation Voltage vs. V
GE
Collector Emitter Voltage, Vce (V)
Figure 6. Capacitance Characteristics
Gate Emitter Voltage, V
GE
( V)
Capacitance (pF)
Collector Emitter Voltage, V
CE
(V)
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Figure 8. Turn-off Characteristics vs. Gate
Resistance
Typical Performance Characteristics
(Continued)
Figure 7. Turn-on Characteristics vs. Gate
Resistance
Switching Time (ns)
Switching Time (ns)
Gate Resistance, R
G
(Ω)
Gate Resistance, R
G
(Ω)
Figure 9. Switching Loss vs. Gate Resistance
Figure 10. Turn-on Characteristics vs. Collector
Current
Switching Loss (mJ)
Switching Loss (mJ)
Gate Resistance, R
G
(Ω)
Collector Current, I
C
(A)
Figure 11. Turn-Off Characteristics vs.
Collector Current
Figure 12. Switching Loss vs. Collector Current
Switching Loss (mJ)
Switching Loss (mJ)
Collector Current, I
C
(A)
Collector Current, I
C
(A)
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NCE15G120P
Figure 14. SOA Characteristics
Typical Performance Characteristics
(Continued)
Figure13. Gate Charge Characteristics
Gate-Emitter Voltage (V)
Gate Charge, Qg (nC)
Collector Current, I
C
(A)
Collector Emitter Voltage, (V)
Figure 15. Turn-Off SOA
Collector Current, I
C
(A)
Collector Emitter Voltage, (V)
Figure 16. Transient Thermal Impedance of IGBT
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