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1N5952B

Description
130 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
CategoryDiscrete semiconductor    diode   
File Size98KB,4 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
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1N5952B Overview

130 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41

1N5952B Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance450 Ω
Number of components1
Maximum operating temperature175 °C
Maximum power dissipation1.5 W
Nominal reference voltage130 V
surface mountNO
Maximum voltage tolerance5%
Working test current2.9 mA
Certificate TH97/10561QM
Certificate TW00/17276EM
1N5913B - 1N5957B
V
Z
: 3.3 - 240 Volts
P
D
: 3 Watts
FEATURES :
* Complete Voltage Range 3.3 to 200 Volts
* High peak reverse power dissipation
* High reliability
* Low leakage current
* Pb / RoHS Free
SILICON ZENER DIODES
DO - 41
0.108 (2.74)
0.079 (1.99)
1.00 (25.4)
MIN.
0.205 (5.20)
0.161 (4.10)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
MECHANICAL DATA
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.335 gram
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS
Rating at 25
°
C ambient temperature unless otherwise specified
Rating
Maximum Steady state Power Dissipation
@ T
L
= 75 ºC, Lead Length = 3/8"
Derate above 75 ºC
Steady State Power Dissipation
@ T
L
= 50 ºC, Lead Length = 3/8"
Derate above 50 ºC
Operating and Storage Temperature Range
Symbol
P
D
Value
3.0
Unit
W
24
P
D
1.0
mW/ ºC
W
6.67
T
J
,T
STG
- 65 to + 200
mW/ ºC
°C
Page 1 of 4
Rev. 07 : June 7, 2006
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