LL647-1 datasheet, PDF - EEWORLD Datasheet

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LL647-1: DescriptionRectifier Diode, 1 Element, 0.4A, 400V V(RRM), Silicon, DO-213AA, GLASS, MELF-2; CategoryDiscrete semiconductor diode; File Size166KB，3 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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LL647-1 Overview

Rectifier Diode, 1 Element, 0.4A, 400V V(RRM), Silicon, DO-213AA, GLASS, MELF-2

LL647-1 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Microsemi
Parts packaging code	DO-213AA
package instruction	GLASS, MELF-2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	HIGH RELIABILITY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JEDEC-95 code	DO-213AA
JESD-30 code	O-LELF-R2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	0.4 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	0.6 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	400 V
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	WRAP AROUND
Terminal location	END
Maximum time at peak reflow temperature	NOT SPECIFIED

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Silicon Rectifier Diodes

Use Advantages

1N645 to 649

1N645-1 to 649-1

DO-35 Glass Package

Used as a general purpose rectifier in power supplies, or for clipping and

steering applications.

High performance alternative to small signal diodes where space does not

permit use of power rectifiers.

May be used in hostile environments where hermeticity and reliability are

important i.e. (Military and Aero/Space). MIL-S- 19500/ 240 approvals.

Available up to JANTXV-1 level.

"S" level screening capability to Source Control Drawings.

Features

D O -3 5 G la ss P a ck a g e

Six Sigma quality

Lead Dia.

0.018-0.022"

Humidity proof glass

0.458-0.558 mm

Metallurgically bonded

Thermally matched system

D ia .

1 .0 "

L e n g th

No thermal fatigue

2 5 .4 m m

(M in .)

1.53-2.28 mm

High surge capability

Sigma Bond™ plated contacts

100% guaranteed solderability

(DO-213AA) SMD MELF commercial (LL) and MIL (UR-1) types available

0.12 0-.200 "

3.05 -5 .08-

0.06 -0 .09"

Absolute Maximum Ratings

Power Dissipation at 3/8" from the body, T

= 75

Average Forward Rectified Current at T

Thermal Impedance

Detail Specifications

Reverse

Voltage

)

Breakdown

Voltage

(MIN.)

@ 100µA

)

Symbol

tot

O&S

qJX

Value

600

400

-65 to 175

Unit

mWatts

mAmps

= 75

Operating and Storage Temperature Range

C/W

Maximum

Forward

Maximum

Average Rectified Current

Voltage

Reverse Leakage Current

_______________

Drop

_______________

)

) @ I

= 400mA

) @ V

25° C

150° C (MIN.)

(MAX.) 25° C

100° C

Maximum

Typical

Surge

Junction

Current Capacitance

FSM

)

@ -12V

(NOTE 1)

)

Type

Volts

Amps

0.15

Second

Volts

1.0

µA

0.2

µA

Amps

1N645,-1

225

275

1N646,-1

300

360

1N647,-1

400

480

1N648,-1

500

600

1N649,-1

600

720

Note 1: Surge Current @T

= +25° C to

0.4

+150° C, for 1

For MELF DO-213AA surface mount package, replace "1N" prefix with "LL" for commercial.

6 Lake Street - Lawrence, MA 01841

Tel: 978-681-0392 - Fax: 978-681-9135

LL647-1 Related Products

	LL647-1	LL648	LL648-1	LL646-1	LL645-1	LL645	LL649	LL647
Description	Rectifier Diode, 1 Element, 0.4A, 400V V(RRM), Silicon, DO-213AA, GLASS, MELF-2	Rectifier Diode, 1 Element, 0.4A, 500V V(RRM), Silicon, DO-213AA, GLASS, MELF-2	Rectifier Diode, 1 Element, 0.4A, 500V V(RRM), Silicon, DO-213AA, GLASS, MELF-2	Rectifier Diode, 1 Element, 0.4A, 300V V(RRM), Silicon, DO-213AA, GLASS, MELF-2	Rectifier Diode, 1 Element, 0.4A, 225V V(RRM), Silicon, DO-213AA, GLASS, MELF-2	Rectifier Diode, 1 Element, 0.4A, 225V V(RRM), Silicon, DO-213AA, GLASS, MELF-2	Rectifier Diode, 1 Element, 0.4A, Silicon, DO-213AA, HERMETIC SEALED, GLASS PACKAGE-2	Rectifier Diode, 1 Element, 0.4A, Silicon, DO-213AA, HERMETIC SEALED, GLASS PACKAGE-2
Maker	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi
Parts packaging code	DO-213AA	DO-213AA	DO-213AA	DO-213AA	DO-213AA	DO-213AA	DO-213AA	DO-213AA
package instruction	GLASS, MELF-2	O-LELF-R2	O-LELF-R2	GLASS, MELF-2	GLASS, MELF-2	O-LELF-R2	O-LELF-R2	HERMETIC SEALED, GLASS PACKAGE-2
Contacts	2	2	2	2	2	2	2	2
Reach Compliance Code	unknown	compliant	compliant	compliant	unknown	compliant	unknown	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	METALLURGICALLY BONDED	METALLURGICALLY BONDED
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JEDEC-95 code	DO-213AA	DO-213AA	DO-213AA	DO-213AA	DO-213AA	DO-213AA	DO-213AA	DO-213AA
JESD-30 code	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LELF-R2
Number of components	1	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2	2
Maximum output current	0.4 A	0.4 A	0.4 A	0.4 A	0.4 A	0.4 A	0.4 A	0.4 A
Package body material	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maximum power dissipation	0.6 W	0.6 W	0.6 W	0.6 W	0.6 W	0.6 W	0.5 W	0.5 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES	YES	YES
Terminal form	WRAP AROUND	WRAP AROUND	WRAP AROUND	WRAP AROUND	WRAP AROUND	WRAP AROUND	WRAP AROUND	WRAP AROUND
Terminal location	END	END	END	END	END	END	END	END
JESD-609 code	e0	e0	e0	e0	e0	e0	-	-
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	-	-
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-	-
Maximum repetitive peak reverse voltage	400 V	500 V	500 V	300 V	225 V	225 V	-	-
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	-	-

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