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2SA2047T106R

Description
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, UMT3, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size41KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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2SA2047T106R Overview

Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, UMT3, 3 PIN

2SA2047T106R Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSC-70
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)180
JESD-30 codeR-PDSO-G3
JESD-609 codee1
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)400 MHz
Base Number Matches1
2SA2047
Transistor
Medium power transistor (
30V,
−0.5
A)
2SA2047
!
Features
1) High speed switching. (Tf : Typ. : 40ns at I
C
=
500mA)
2) Low saturation voltage, typically
(Typ. :
−150mV
at I
C
=
100A, I
B
=
100mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SC5729
!
External dimensions
(Units : mm)
0.65 0.65
0.7
UMT3
0.3
(3)
(1)
1.25
0.2
2.1
0.15
(2)
(1)Emitter
(2)Base
(3)Collector
0.1Min.
Each lead has same dimensions
Abbreviated symbol : UV
!Applications
Small signal low frequency amplifier
High speed switching
!
Structure
PNP Silicon epitaxial planar transistor
!
Packaging specifications
Package
Type
2SA2047
Code
Basic ordering unit (pieces)
Taping
T106
3000
!
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Collector current
I
CP
Power dissipation
P
C
Junction temperature
Tj
Range of storage temperature Tstg
∗1
Pw=10ms
∗2
Each terminal mounted on a recommended land
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Limits
−30
−30
−6
−0.5
−1.0
200
150
−55~+150
Unit
V
V
V
A
A
∗1
mW
∗2
°C
°C
0.9
1.3
2.0
1/3

2SA2047T106R Related Products

2SA2047T106R 2SA2047T106Q
Description Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, UMT3, 3 PIN Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, UMT3, 3 PIN
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Parts packaging code SC-70 SC-70
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.5 A 0.5 A
Collector-emitter maximum voltage 30 V 30 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 180 120
JESD-30 code R-PDSO-G3 R-PDSO-G3
JESD-609 code e1 e1
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.2 W 0.2 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu) TIN SILVER COPPER
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 10 10
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 400 MHz 400 MHz
Base Number Matches 1 1

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