Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Sec
Symbol
R
qJC
T
L
Value
2.2
260
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(V
D
= Rated V
DRM
, V
RRM
; Gate Open)
T
C
= 25°C
T
C
= 100°C
ON CHARACTERISTICS
Peak On-State Voltage (Note 2)
(I
T
=
"30
A Peak)
Gate Trigger Current (Continuous dc)
(V
D
= 12 Vdc, R
L
= 100
W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
Gate Trigger Voltage (Continuous dc) (All Quadrants)
(V
D
= 12 Vdc, R
L
= 100
W)
Gate Non−Trigger Voltage (Continuous dc)
(V
D
= 12 V, R
L
= 100
W,
T
C
= 100°C)
Holding Current
(V
D
= 12 Vdc, Initiating Current =
"200
mA, Gate Open)
Gate Controlled Turn-On Time
(V
D
= Rated V
DRM
, I
T
= 10 A, I
GT
= 80 mA, Rise Time = 0.1
ms)
DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Commutation Voltage
(V
D
= Rated V
DRM
, I
T(RMS)
= 8 A, Commutating di/dt = 4.1 A/ms,
Gate Unenergized, T
C
= 80°C)
Critical Rate-of-Rise of Off-State Voltage
(V
D
= Rated V
DRM
, Exponential Voltage Rise, Gate Open, T
C
= 100°C)
2. Pulse Test: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
dv/dt(c)
−
10
−
V/ms
V
GT
V
GD
I
H
t
gt
V
TM
I
GT
−
−
−
−
−
0.2
−
−
10
20
15
30
1.25
−
15
1.6
25
60
25
60
2.5
−
30
−
V
V
mA
ms
−
1.7
2.0
V
mA
I
DRM
,
I
RRM
−
−
−
−
10
2.0
mA
mA
Symbol
Min
Typ
Max
Unit
dv/dt
60
−
−
V/ms
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
Quadrant 3
MainTerminal 2 −
I
H
V
TM
I
RRM
at V
RRM
on state
I
H
V
TM
off state
+ Voltage
I
DRM
at V
DRM
http://onsemi.com
2
T2800D
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant I
I
GT
−
(−) MT2
(−) MT2
+ I
GT
Quadrant III
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant IV
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (
°
C)
P(AV) , AVERAGE POWER DISSIPATION (WATTS)
100
12
10
8
6
4
2
0
95
90
FULL CYCLE
SINUSOIDAL
WAVEFORM
FULL CYCLE
SINUSOIDAL
WAVEFORM
MAXIMUM
TYPICAL
85
80
0
2
4
6
8
0
2
4
6
8
10
12
I
T(RMS)
, RMS ON-STATE CURRENT (AMP)
I
T(RMS)
, RMS ON-STATE CURRENT (AMP)
Figure 1. Current Derating
Figure 2. Power Dissipation
http://onsemi.com
3
T2800D
PACKAGE DIMENSIONS
TO−220
CASE 221A−07
ISSUE AA
−T−
B
F
C
SEATING
PLANE
T
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.014
0.022
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−−
0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.36
0.55
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
4
Q
1 2 3
A
U
K
H
Z
L
V
G
D
N
J
R
STYLE 4:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
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Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
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