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T2800D

Description
400V, 8A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB, CASE 221A, 4 PIN
CategoryAnalog mixed-signal IC    Trigger device   
File Size38KB,4 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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T2800D Overview

400V, 8A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB, CASE 221A, 4 PIN

T2800D Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Manufacturer packaging codeCASE 221A
Reach Compliance Codeunknown
Shell connectionMAIN TERMINAL 2
ConfigurationSINGLE
Critical rise rate of commutation voltage - minimum value4 V/us
Critical rise rate of minimum off-state voltage75 V/us
Maximum DC gate trigger current25 mA
Maximum DC gate trigger voltage2.5 V
Maximum holding current30 mA
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Maximum leakage current2 mA
Number of components1
Number of terminals3
Maximum on-state voltage2 V
Maximum operating temperature125 °C
Minimum operating temperature-45 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum rms on-state current8 A
Off-state repetitive peak voltage400 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Trigger device type4 QUADRANT LOGIC LEVEL TRIAC
T2800D
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies.
Blocking Voltage to 400 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Four Quadrant Gating
Device Marking: Logo, Device Type, e.g., T2800D, Date Code
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Peak Repetitive Off–State Voltage(1)
(TJ = –40 to +125°C, Gate Open)
On–State RMS Current
(All Conduction Angles, TC = +80°C)
Peak Non–Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TJ = +80°C)
Circuit Fusing Consideration (t = 8.3 ms)
Peak Gate Power
(Pulse Width = 10
µs,
TC = +80°C)
Average Gate Power (t = 8.3 ms,
TC = +80°C)
Peak Gate Current
(Pulse Width = 10
µs,
TC = +80°C)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
VDRM,
VRRM
IT(RMS)
ITSM
Value
400
8.0
100
Unit
Volts
Amps
Amps
4
http://onsemi.com
TRIACS
8 AMPERES RMS
400 VOLTS
MT2
G
MT1
I2t
PGM
PG(AV)
IGM
TJ
Tstg
40
16
0.35
4.0
– 40 to
+125
– 40 to
+150
A2s
Watts
Watt
Amps
1
2
3
TO–220AB
CASE 221A
STYLE 4
PIN ASSIGNMENT
°C
°C
1
2
3
4
Main Terminal 1
Main Terminal 2
Gate
Main Terminal 2
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
ORDERING INFORMATION
Device
T2800D
Package
TO220AB
Shipping
500/Box
©
Semiconductor Components Industries, LLC, 1999
633
February, 2000 – Rev. 3
Publication Order Number:
T2800/D

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