2SA1037AK
PNP Silicon
Elektronische Bauelemente
A suffix of "-C" specifies halogen & lead-free
A
L
General Purpose Transistor
SC-59
Dim
A
1
Min
2.70
1.30
1.00
0.35
1.70
0.00
0.10
0.20
1.25
2.25
Max
3.10
1.70
1.30
0.50
2.30
0.10
0.26
0.60
1.65
3.00
FEATURES
S
2
3
Top View
B
B
C
D
G
H
J
K
n
RoHS Compliant Product.
Excellent h
FE
linearity.
Complments the 2SC2412K.
H
G
D
n
n
C
J
K
L
S
COLLECTOR
MARKING : FP, FQ, FR
*
BASE
EMITTER
O
All Dimension in mm
MAXIMUM RATINGS* T
A
=25 C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
Parameter
Value
-60
-50
-6
-150
200
-55~150
Units
V
V
V
mA
mW
℃
*These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test
conditions
MIN
-60
-50
-6
-0.1
-0.1
120
560
-0.5
140
4
5
V
MHz
pF
TYP
MAX
UNIT
V
V
V
µA
µA
Ic=-50µA, I
E
=0
Ic=-1uA,I
B
=0
I
E
=-50µA, I
C
=0
V
CB
=-60V,I
E
=0
V
EB
=-6V,I
C
=0
V
CE
=-6V,I
C
=-1mA
I
C
=-50mA,I
B
=-5mA
V
CE
=-12V,I
C
=-2mA,f=30MHz
V
CB
=-12V,I
E
=0,f=1MHz
CLASSIFICATION OF
Rank
Range
http://www.SeCoSGmbH.com
h
FE
P
120
-
270
Q
180 -
390
R
270
-
560
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
1
of
2
2SA1037AK
Elektronische Bauelemente
PNP Silicon
General Purpose Transistor
Electrical characteristic curves
−50
COLLECTOR CURRENT : Ic (
mA)
COLLECTOR CURRENT : I
C
(
mA)
−20
−10
−5
−2
−1
−0.5
−0.2
−0.1
COLLECTOR CURRENT : I
C
(
mA
)
Ta=100˚C
25˚C
−40˚C
V
CE
=
−6V
−10
−35.0
Ta=25˚C
−100
−31.5
−28.0
−24.5
Ta=25˚C
−8
−80
−6
−21.0
−17.5
−60
−500
−450
−400
−350
−300
−250
−200
−4
−14.0
−10.5
−40
−150
−100
−2
−7.0
−3.5µA
−20
−50µA
I
B
=0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
BASE TO EMITTER VOLTAGE : V
BE
(
V)
0
−0.4
−0.8
−1.2
−1.6
I
B
=0
−2.0
0
−1
−2
−3
−4
−5
COLLECTOR TO MITTER VOLTAGE : V
CE
(
V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(
V)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Grounded emitter output
characteristics (I)
Fig.3 Grounded emitter output
characteristics (II)
Ta=25˚C
V
CE
=
−5V
−3V
−1V
DC CURRENT GAIN : h
FE
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(
V)
500
500
Ta=100˚C
25˚C
−1
Ta=25˚C
DC CURRENT GAIN : h
FE
−0.5
200
−40˚C
200
100
−0.2
I
C
/I
B
=50
100
−0.1
20
10
50
50
V
CE
=
−6V
−5 −10 −20 −50 −100
−0.05
−0.2 −0.5 −1
−2
−5 −10 −20
−50 −100
−0.2 −0.5 −1
−2
−5 −10 −20
−50 −100
−0.2 −0.5 −1
−2
COLLECTOR CURRENT : I
C
(
mA)
COLLECTOR CURRENT : I
C
(
mA)
COLLECTOR CURRENT : I
C
(
mA)
Fig.4 DC current gain vs.
collector current (I)
Fig.5 DC current gain vs.
collector current (II)
Fig.6 Collector-emitter saturation
voltage vs. collector current (I)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(
V)
l
C
/l
B
=10
−0.5
TRANSITION FREQUENCY : f
T
(
MHz)
Ta=25˚C
V
CE
=
−
12V
COLLECTOR OUTPUT CAPACITANCE : Cob (
pF)
EMITTER INPUT CAPACITANCE
: Cib (
pF)
−1
1000
20
Cib
10
500
Ta=25˚C
f=1MHz
I
E
=0A
I
C
=0A
Co
b
−0.2
Ta=100˚C
25˚C
−40˚C
200
5
−0.1
100
2
−0.05
−0.2 −0.5 −1
−2
−5 −10 −20
−50 −100
50
0.5
1
2
5
10
20
50
100
−0.5
−1
−2
−5
−10
−20
COLLECTOR CURRENT : I
C
(
mA)
EMITTER CURRENT : I
E
(
mA)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
Fig.7 Collector-emitter saturation
voltage vs. collector current (II)
Fig.8 Gain bandwidth product vs.
emitter current
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
01-Jun-2002 Rev. A
Page
2
of
2
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