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2W08

Description
2 A, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size40KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
Download Datasheet Parametric Compare View All

2W08 Overview

2 A, SILICON, BRIDGE RECTIFIER DIODE

2W08 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
package instructionO-PBCY-W4
Reach Compliance Codecompli
Other featuresHIGH RELIABILITY
Minimum breakdown voltage800 V
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeO-PBCY-W4
Maximum non-repetitive peak forward current50 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-50 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
GuidelineTS 16949
Maximum repetitive peak reverse voltage800 V
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
2W005 - 2W10
PRV : 50 - 1000 Volts
Io : 2.0 Amperes
FEATURES :
*
*
*
*
*
*
*
High case dielectric strength
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Ideal for printed circuit board
Pb / RoHS Free
SILICON BRIDGE RECTIFIERS
WOB
0.39 (10.0)
0.31 (7.87)
0.22 (5.59)
0.18 (4.57)
+
AC
-
1.00 (25.4)
MIN.
1.10 (27.9)
MIN.
0.034 (0.86)
0.028 (0.71)
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated leads solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 1.29 grams
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
AC
+
-
AC
0.22 (5.59)
0.18 (4.57)
0.22 (5.59)
0.18 (4.57)
Dimension in inches and (millimeter)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375" (9.5 mm) lead length
Single half sine wave
Rating for fusing
( t < 8.3 ms. )
Ta = 25
°C
Ta = 100
°C
Maximum Forward Voltage per Diode at I
F
= 1.0 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
Tc = 25°C
Maximum Peak Forward Surge Current
SYMBOL 2W005 2W01 2W02 2W04 2W06 2W08 2W10 UNIT
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
It
V
F
I
R
I
R(H)
C
J
R
θ
JA
T
J
T
STG
2
50
35
50
100
70
100
200
140
200
400
280
400
2.0
50
10
1.0
10
1.0
24
36
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
AS
V
µA
mA
pf
°C/W
°C
°C
2
Typical Junction Capacitance per Diode (Note 1)
- 50 to + 150
- 50 to + 150
Notes :
1 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
2 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead length P.C. Board with, 0.22" x 0.22" (5.5 x 5.5 mm) copper Pads.
Page 1 of 2
Rev. 02 : March 25, 2005

2W08 Related Products

2W08 2W01 2W04 2W005_05 2W02 2W06 2W10 2W005
Description 2 A, SILICON, BRIDGE RECTIFIER DIODE 2 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 2 A, SILICON, BRIDGE RECTIFIER DIODE 2 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 2 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 2 A, SILICON, BRIDGE RECTIFIER DIODE
Is it lead-free? Lead free Lead free Lead free - Lead free Lead free - Lead free
Is it Rohs certified? conform to conform to conform to - conform to conform to - conform to
Maker EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] - EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] - EIC [EIC discrete Semiconductors]
package instruction O-PBCY-W4 O-PBCY-W4 O-PBCY-W4 - O-PBCY-W4 O-PBCY-W4 - O-PBCY-W4
Reach Compliance Code compli compli compli - compli compli - compli
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY - HIGH RELIABILITY HIGH RELIABILITY - HIGH RELIABILITY
Minimum breakdown voltage 800 V 100 V 400 V - 200 V 600 V - 50 V
Shell connection ISOLATED ISOLATED ISOLATED - ISOLATED ISOLATED - ISOLATED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS - BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS - BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON - SILICON SILICON - SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE - BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE - BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V - 1 V 1 V - 1 V
JESD-30 code O-PBCY-W4 O-PBCY-W4 O-PBCY-W4 - O-PBCY-W4 O-PBCY-W4 - O-PBCY-W4
Maximum non-repetitive peak forward current 50 A 50 A 50 A - 50 A 50 A - 50 A
Number of components 4 4 4 - 4 4 - 4
Phase 1 1 1 - 1 1 - 1
Number of terminals 4 4 4 - 4 4 - 4
Maximum operating temperature 150 °C 150 °C 150 °C - 150 °C 150 °C - 150 °C
Minimum operating temperature -50 °C -50 °C -50 °C - -50 °C -50 °C - -50 °C
Maximum output current 2 A 2 A 2 A - 2 A 2 A - 2 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape ROUND ROUND ROUND - ROUND ROUND - ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL - CYLINDRICAL CYLINDRICAL - CYLINDRICAL
Guideline TS 16949 TS 16949 TS 16949 - TS 16949 TS 16949 - TS 16949
Maximum repetitive peak reverse voltage 800 V 100 V 400 V - 200 V 600 V - 50 V
surface mount NO NO NO - NO NO - NO
Terminal form WIRE WIRE WIRE - WIRE WIRE - WIRE
Terminal location BOTTOM BOTTOM BOTTOM - BOTTOM BOTTOM - BOTTOM
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