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30KP33A

Description
30000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Categorysemiconductor    Discrete semiconductor   
File Size116KB,3 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Download Datasheet View All

30KP33A Overview

30000 W, UNIDIRECTIONAL, SILICON, TVS DIODE

TH97/2478
TH09/2479
IATF 0060636
SGS TH07/1033
30KP SERIES
V
R
: 22 - 400 Volts
P
PK
: 30,000 Watts
FEATURES :
* Glass passivated junction chip
* Excellent Clamping Capability
* Fast Response Time
* Low Leakage Current
* Pb / RoHS Free
TRANSIENT VOLTAGE
SUPPRESSOR
D6
0.360 (9.1)
0.340 (8.6)
1.00 (25.4)
MIN.
0.360 (9.1)
0.340 (8.6)
MECHANICAL DATA
* Case : Void-free molded plastic body
* Epoxy : UL94V-0 rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end except Bipolar.
* Mounting position : Any
* Weight : 2.1 grams
0.052 (1.32)
0.048 (1.22)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS
(Ta = 25
°C)
Rating
Peak Pulse Power Dissipation (10 x 1000μs, see Fig.2 )
Steady State Power Dissipation
Peak Forward Surge Current, 8.3ms Single Half Sine Wave
(Uni-directional devices only)
Operating and Storage Temperature Range
Fig. 1 - Pulse Derating Curve
Symbol
P
PK
P
D
I
FSM
T
J
, T
STG
Value
30,000
7
250
- 55 to + 175
Unit
W
W
A
°C
Peak Pulse Power (P
PP
) or Current
(I
PP
) Derating in Percentage %
Fig. 2 - Pulse Wave Form
Peak Pulse Current - % I
PP
125
tr
100
Peak Value - I
PP
100
Test Waveform
Paramiters
tr = 10
μs
tp = 1000
μs
75
Half Value - I
PP
2
50
10x1000
μs
Waveform
50
25
tp
0
0
1
2
3
0
0
25
50
75
100
125
150
175
Ambient Temperature , (C°)
Page 1 of 3
T, Time(ms)
Rev. 05 : June 17, 2009

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