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30KP60A

Description
30000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size116KB,3 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
Download Datasheet Parametric View All

30KP60A Overview

30000 W, UNIDIRECTIONAL, SILICON, TVS DIODE

30KP60A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
package instructionO-PALF-W2
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresEXCELLENT CLAMPING CAPABILITY
Maximum breakdown voltage73.7 V
Minimum breakdown voltage66.7 V
Breakdown voltage nominal value70.2 V
Shell connectionISOLATED
Maximum clamping voltage97.3 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
JESD-609 codee3
Maximum non-repetitive peak reverse power dissipation30000 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation7 W
Maximum repetitive peak reverse voltage60 V
surface mountNO
technologyAVALANCHE
Terminal surfaceTin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
TH97/2478
TH09/2479
IATF 0060636
SGS TH07/1033
30KP SERIES
V
R
: 22 - 400 Volts
P
PK
: 30,000 Watts
FEATURES :
* Glass passivated junction chip
* Excellent Clamping Capability
* Fast Response Time
* Low Leakage Current
* Pb / RoHS Free
TRANSIENT VOLTAGE
SUPPRESSOR
D6
0.360 (9.1)
0.340 (8.6)
1.00 (25.4)
MIN.
0.360 (9.1)
0.340 (8.6)
MECHANICAL DATA
* Case : Void-free molded plastic body
* Epoxy : UL94V-0 rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end except Bipolar.
* Mounting position : Any
* Weight : 2.1 grams
0.052 (1.32)
0.048 (1.22)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS
(Ta = 25
°C)
Rating
Peak Pulse Power Dissipation (10 x 1000μs, see Fig.2 )
Steady State Power Dissipation
Peak Forward Surge Current, 8.3ms Single Half Sine Wave
(Uni-directional devices only)
Operating and Storage Temperature Range
Fig. 1 - Pulse Derating Curve
Symbol
P
PK
P
D
I
FSM
T
J
, T
STG
Value
30,000
7
250
- 55 to + 175
Unit
W
W
A
°C
Peak Pulse Power (P
PP
) or Current
(I
PP
) Derating in Percentage %
Fig. 2 - Pulse Wave Form
Peak Pulse Current - % I
PP
125
tr
100
Peak Value - I
PP
100
Test Waveform
Paramiters
tr = 10
μs
tp = 1000
μs
75
Half Value - I
PP
2
50
10x1000
μs
Waveform
50
25
tp
0
0
1
2
3
0
0
25
50
75
100
125
150
175
Ambient Temperature , (C°)
Page 1 of 3
T, Time(ms)
Rev. 05 : June 17, 2009
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