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31DQ04

Description
3.3 A, SILICON, RECTIFIER DIODE, DO-201AD
CategoryDiscrete semiconductor    diode   
File Size33KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
Download Datasheet Parametric Compare View All

31DQ04 Overview

3.3 A, SILICON, RECTIFIER DIODE, DO-201AD

31DQ04 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Reach Compliance Codecompli
Other featuresHIGH RELIABILITY, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.57 V
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current90 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current3.3 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage40 V
Maximum reverse current1000 µA
surface mountNO
technologySCHOTTKY
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
31DQ03 - 31DQ04
PRV : 30 - 40 Volts
I
O
: 3.3 Amperes
FEATURES :
*
*
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
High efficiency
Low power loss
Low forward voltage drop
Low cost
Pb / RoHS Free
SCHOTTKY BARRIER
RECTIFIER DIODES
DO-201AD
0.21 (5.33)
0.19 (4.82)
1.00 (25.4)
MIN.
0.375 (9.52)
0.285 (7.24)
0.052 (1.32)
0.048 (1.22)
1.00 (25.4)
MIN.
MECHANICAL DATA :
* Case : DO-201AD Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 1.1 grams
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
at Ambient Temperature , Tc = 48
°C
Maximum Non-repetitive Peak Forward Surge Current
( 50 Hz, Sine wave, 10ms )
Maximum Forward Voltage at I
F
= 3.0 A
Maximum Reverse Current at V
R
= V
RRM
, Tj = 25°C
Junction Temperature Range
Storage Temperature Range
SYMBOL
V
RRM
V
DC
I
F(AV
)
31DQ03
30
30
3.3
31DQ04
40
40
UNIT
V
V
A
I
FSM
V
F
I
R
T
J
T
STG
120
0.55
3.0
- 40 to + 150
- 40 to + 150
A
V
mA
°C
°C
Page 1 of 2
Rev. 02 : March 25, 2005

31DQ04 Related Products

31DQ04 31DQ03
Description 3.3 A, SILICON, RECTIFIER DIODE, DO-201AD 3.3 A, SILICON, RECTIFIER DIODE, DO-201AD
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Reach Compliance Code compli compli
Other features HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY, LOW POWER LOSS
application EFFICIENCY EFFICIENCY
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.57 V 0.57 V
JEDEC-95 code DO-201AD DO-201AD
JESD-30 code O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 90 A 90 A
Number of components 1 1
Phase 1 1
Number of terminals 2 2
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -40 °C -40 °C
Maximum output current 3.3 A 3.3 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND
Package form LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Maximum repetitive peak reverse voltage 40 V 30 V
Maximum reverse current 1000 µA 1000 µA
surface mount NO NO
technology SCHOTTKY SCHOTTKY
Terminal form WIRE WIRE
Terminal location AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1

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