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MSS40,155-B10B

Description
SILICON, MEDIUM BARRIER SCHOTTKY,mm WAVE BAND, MIXER DIODE, CASE B10B, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size185KB,4 Pages
ManufacturerCobham Semiconductor Solutions
Environmental Compliance  
Download Datasheet Parametric View All

MSS40,155-B10B Overview

SILICON, MEDIUM BARRIER SCHOTTKY,mm WAVE BAND, MIXER DIODE, CASE B10B, 2 PIN

MSS40,155-B10B Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerCobham Semiconductor Solutions
package instructionR-CDMW-F2
Contacts2
Manufacturer packaging codeCASE B10B
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Maximum diode capacitance0.3 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
Maximum forward voltage (VF)0.38 V
frequency bandMILLIMETER WAVE BAND
JESD-30 codeR-CDMW-F2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current0.05 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formMICROWAVE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.1 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage3 V
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Schottky barrier typeMEDIUM BARRIER
MSS40,000 Series
Medium Barrier Silicon Schottky Diodes
Description
The Aeroflex / Metelics MSS40,000 Series of Schottky diodes
are fabricated on N-Type epitaxial substrates using proprietary
processes that yield the highest FCOs in the industry. Optimum
mixer performance is obtained with LO power of 0 dBm to +6
dBm per diode.
Features
V
F
, R
D
and C
J
matching options
Chip, beam lead or packaged devices
Hi-Rel screening per MIL-PRF-19500
and MIL-PRF-38534 available
Absolute Maximum Ratings
Parameters
Reverse Voltage
Forward Current
Operation Temperature
Storage Temperature
Power Dissipation
Soldering Temperature (Packaged)
Beam Lead Pull Strength
Rated V
BR
50 mA
-65 ºC to +1 ºC
50
-65 ºC to +1 ºC
50
100 mW per junction at T
A
= 25 ºC, derate
linearly to zero at T
A
= +1 ºC
50
+ 260 ºC for 5 sec.
4 grams minimum
Rating
Chip
Electrical Specifications,
T
A
= 25 ºC
V
F
V
BR
MIN
C
J
TYP / MAX
R
S
TYP
R
D
MAX
F
CO
TYP
Model
MSS40,045-C1
5
MSS40,048-C1
5
Test
Conditions
Configuration
TYP
Outline
V
V
pF
GHz
Single Junction
Single Junction
0.42
0.40
I
F
= 1
mA
3
3
I
R
=
10
μA
0.09 / 0.1
2
0.1 / 0.1
2
5
V
R
= 0 V
F = 1 MHz
7
7
1
5
1
5
253
190
C1
5
C1
5
I
F
= 5 mA
Revision Date: 05/20/05
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