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80SCLQ060

Description
80 A, 60 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size111KB,4 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

80SCLQ060 Overview

80 A, 60 V, SILICON, RECTIFIER DIODE

80SCLQ060 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
MakerInternational Rectifier ( Infineon )
package instructionR-CBCC-N3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-CBCC-N3
Maximum non-repetitive peak forward current400 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current80 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage60 V
surface mountYES
technologySCHOTTKY
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
PD-94248A
SCHOTTKY RECTIFIER
HIGH EFFICIENCY SERIES
80SCLQ060
80 Amp, 60V
Major Ratings and Characteristics
Characteristics
I
F(AV)
V
RRM
(Per Leg)
I
FSM
@ tp = 8.3ms half-sine
(Per Leg)
V
F
@ 40Apk, T
J
=125°C
(Per Leg)
80SCLQ060 Units
80
60
400
0.64
A
V
A
V
°C
Description/Features
The 80SCLQ060 center tap Schottky rectifier has been
expressly designed to meet the rigorous requirements of
HiRel environments. It is packaged in the hermetic surface
mount SMD-1 ceramic package. The device's forward
voltage drop and reverse leakage current are optimized
for the lowest power loss and the highest circuit efficiency
for typical high frequency switching power supplies and
resonent power converters. Full MIL-PRF-19500 quality
conformance testing is available on source control
drawings to TX, TXV and S quality levels.
Hermetically Sealed
Center Tap
Low Forward Voltage Drop
High Frequency Operation
Guard Ring for Enhanced Ruggedness and Long term
Reliability
• Surface Mount
• Lightweight
T
J
, T
stg
Operating and storage
-55 to 150
CASE STYLE
( ISOLATED BASE )
2
1
3
ANODE COMMON ANODE
CATHODE
Case Outline and Dimensions - SMD-1
www.irf.com
1
10/02/13

80SCLQ060 Related Products

80SCLQ060 80SCLQ060SCS
Description 80 A, 60 V, SILICON, RECTIFIER DIODE Rectifier Diode, Schottky, 40A, 60V V(RRM),
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon )
Reach Compliance Code unknow unknown
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum non-repetitive peak forward current 400 A 400 A
Maximum operating temperature 150 °C 150 °C
Maximum output current 80 A 40 A
Maximum repetitive peak reverse voltage 60 V 60 V
surface mount YES YES
technology SCHOTTKY SCHOTTKY
Base Number Matches 1 1
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