NE02135
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The
ASI NE02135
is Designed for
Oscillator and Amplifier Applications
up to 2.0 GHz.
PACKAGE STYLE .100 4LPILL
FEATURES INCLUDE:
•
High insertion gain.
•
High power gain.
•
Low Noise figure
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
70 mA
25 V
12 V
3.0 V
3.3 W @ T
A
= 25 °C
-65 °C to +200 °C
-65 °C to +200 °C
53 °C/W
Suffix 85 for plastic package and 35 for ceramic package
CHARACTERISTICS
SYMBOL
I
CBO
I
EBO
h
FE
C
CB
f
t
⏐S
21
⏐
2
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
MAG
V
CB
= 15 V
V
EB
= 2.0 V
V
CE
= 10 V
V
CB
= 10 V
V
CE
= 10 V
V
CE
= 10 V
T
C
= 25 °C
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
1.0
1.0
UNITS
µA
µA
---
pF
GHz
dB
I
C
= 20 mA
f = 1.0 MHz
I
C
= 20 mA
I
C
= 20 mA
f = 1.0 GHz
f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 0.5 GHz
f = 2.0 GHz
f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
20
0.6
4.5
18.5
13
5.7
1.5
2.7
22
18
11
250
1.0
5.0
NF
MIN
I
C
= 3.0 mA
I
C
= 5.0 mA
I
C
= 20 mA
4.0
dB
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. C
1/1
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