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ULBM2TE_07

Description
NPN SILICON RF POWER TRANSISTOR
File Size13KB,1 Pages
ManufacturerASI [ASI Semiconductor, Inc]
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ULBM2TE_07 Overview

NPN SILICON RF POWER TRANSISTOR

VHB50-28F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI VHB50-28F
is Designed for
PACKAGE STYLE .380 4L FLG
B
.112 x 45°
A
Ø.125 NOM.
FULL R
J
.125
FEATURES:
Omnigold™
Metalization System
C
D
F
E
H I
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
O
G
6.5 A
65 V
35 V
4.0 V
75W
-65
O
C to +200
O
C
-65 C to +150 C
2.3
O
C/W
O
DIM
A
B
C
D
E
F
G
H
I
J
.240 / 6.10
.004 / 0.10
.085 / 2.16
.160 / 4.06
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59
.785 / 19.94
.720 / 18.29
.970 / 24.64
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
ORDER CODE: ASI10728
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
EBO
I
CBO
I
CES
h
FE
C
ob
f
T
P
G
η
C
T
C
= 25 C
O
NONETEST
CONDITIONS
I
C
= 200 mA
I
C
= 200 mA
I
E
= 10 mA
V
CB
= 30 V
V
CE
= 30 V
V
CE
= 5.0 V
V
CB
= 28 V
V
CE
= 10 V
V
CE
= 28 V
I
C
= 500 mA
P
OUT
=50 W
I
C
= 500 mA
f = 1.0 MHz
f = 100 MHz
f = 175 MHz
T
C
= 125
O
C
MINIMUM TYPICAL MAXIMUM
35
65
4.0
2.0
10
5.0
---
80
200
6.0
60
UNITS
V
V
V
mA
mA
---
pF
MHz
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1

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