BCV61-C datasheet, PDF - EEWORLD Datasheet

BCV61-C: Description200mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size94KB，5 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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BCV61-C Overview

200mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR

Parameter Name	Attribute value
Maker	SIEMENS
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown
Shell connection	COLLECTOR
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	30 V
Configuration	CURRENT MIRROR
Minimum DC current gain (hFE)	420
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
VCEsat-Max	0.6 V

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