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BCV62C

Description
TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size132KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance  
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BCV62C Overview

TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP General Purpose Small Signal

BCV62C Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
package instructionPLASTIC PACKAGE-4
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresFOR TRANSISTOR2 HFE IS 420
Shell connectionCOLLECTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage30 V
ConfigurationCURRENT MIRROR
Minimum DC current gain (hFE)420
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.65 V
BCV62
PNP general-purpose double transistors
Rev. 4 — 26 July 2010
Product data sheet
1. Product profile
1.1 General description
PNP general-purpose double transistors in a small SOT143B Surface-Mounted
Device (SMD) plastic package.
Table 1.
Product overview
Package
NXP
BCV62
BCV62A
BCV62B
BCV62C
SOT143B
JEITA
-
BCV61
BCV61A
BCV61B
BCV61C
NPN complement
Type number
1.2 Features and benefits
Low current (max. 100 mA)
Low voltage (max. 30 V)
Matched pairs
AEC-Q101 qualified
Small SMD plastic package
1.3 Applications
Applications with working point independent of temperature
Current mirrors
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
V
CE
=
−5
V; I
C
=
−100 μA
V
CE
=
−5
V; I
C
=
−2
mA
Conditions
open base
Min
-
-
100
100
Typ
-
-
-
-
Max
−30
−100
-
800
Unit
V
mA
Per transistor
Transistor TR1

BCV62C Related Products

BCV62C BCV62A
Description TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP General Purpose Small Signal TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP General Purpose Small Signal
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker NXP NXP
package instruction PLASTIC PACKAGE-4 PLASTIC PACKAGE-4
Contacts 4 4
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Other features FOR TRANSISTOR2 HFE IS 420 FOR TRANSISTOR2 HFE IS 125
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 0.1 A 0.1 A
Collector-emitter maximum voltage 30 V 30 V
Configuration CURRENT MIRROR CURRENT MIRROR
Minimum DC current gain (hFE) 420 100
JESD-30 code R-PDSO-G4 R-PDSO-G4
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 4 4
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type PNP PNP
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 30 30
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz
VCEsat-Max 0.65 V 0.65 V
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