BCW66
NPN Silicon AF Transistors
•
For general AF applications
•
High current gain
•
Low collector-emitter saturation voltage
•
Complementary type: BCW68 (PNP)
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
3
1
2
Type
BCW66F
BCW66KF*
BCW66G
BCW66KG*
BCW66H
BCW66KH*
* Shrinked chip version
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation-
T
S
≤
79 °C, BCW66
T
S
≤
115 °C, BCW66K
Junction temperature
Storage temperature
1
Pb-containing
Marking
EFs
EFs
EGs
EGs
EHs
EHs
1=B
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
2=E
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
3=C
3=C
Package
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
Value
45
75
5
800
1
100
200
Unit
V
mA
A
mA
mW
330
500
T
j
T
stg
150
-65 ... 150
°C
package may be available upon special request
1
2007-04-20
BCW66
Thermal Resistance
Parameter
Junction - soldering point
1)
BCW66
BCW66K
Symbol
R
thJS
Value
≤
215
≤ 70
Unit
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
DC Characteristics
-
-
Collector-emitter breakdown voltage
V
(BR)CEO
45
V
I
C
= 10 mA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0
V
(BR)CBO
V
(BR)EBO
I
CBO
75
5
-
-
-
-
µA
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
Collector-base cutoff current
V
CB
= 45 V,
I
E
= 0
V
CB
= 45 V,
I
E
= 0 ,
T
A
= 150 °C
-
-
I
EBO
h
FE
-
-
-
0.02
20
20
nA
-
Emitter-base cutoff current
V
EB
= 5 V,
I
C
= 0
-
DC current gain
2)
I
C
= 100 µA - 10 mA,
V
CE
= 1 V, hFE-grp.F
I
C
= 100 µA - 10 mA,
V
CE
= 1 V, hFE-grp.G
I
C
= 100 µA - 10 mA,
V
CE
= 1 V, hFE-grp.H
I
C
= 100 mA,
V
CE
= 1 V, hFE-grp.F
I
C
= 100 mA,
V
CE
= 1 V, hFE-grp.G
I
C
= 100 mA,
V
CE
= 1 V, hFE-grp.H
I
C
= 500 mA,
V
CE
= 1 V, hFE-grp.F, G, H
75
110
180
100
160
250
40
V
CEsat
-
-
-
160
250
350
-
-
-
-
250
400
630
-
V
Collector-emitter saturation voltage
2)
I
C
= 100 mA,
I
B
= 10 mA
I
C
= 500 mA,
I
B
= 50 mA
-
-
V
BEsat
-
-
-
-
0.3
0.45
1.25
1.25
Base emitter saturation voltage
2)
I
C
= 100 mA,
I
B
= 10 mA
I
C
= 500 mA,
I
B
= 50 mA
1
For
2
Pulse
-
-
calculation of
R
thJA
please refer to Application Note Thermal Resistance
test: t < 300µs; D < 2%
2
2007-04-20
BCW66
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
AC Characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 5 V,
f
= 20 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz, BCW66
V
CB
= 10 V,
f
= 1 MHz, BCW66K
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz, BCW66
V
EB
= 0.5 V,
f
= 1 MHz, BCW66K
C
eb
-
-
60
40
-
-
C
cb
-
-
6
3
-
-
pF
f
T
-
170
-
MHz
typ.
max.
Unit
3
2007-04-20
BCW66
DC current gain
h
FE
=
ƒ(
I
C
)
V
CE
= 1 V
10
3
5
BCW 65/66
EHP00396
Collector-emitter saturation voltage
I
C
=
ƒ(
V
CEsat
),
h
FE
= 10
10
3
mA
BCW 65/66
EHP00395
100 ˚C
h
FE
25 ˚C
10
2
5
-50 ˚C
Ι
C
10
2
5
150 ˚C
25 ˚C
-50 ˚C
10
1
5
10
1
5
10
0
5
10
0
10
-1
5 10
0
5 10
1
5 10
2
mA 10
3
10
-1
0
200
400
600 mV 800
V
CE sat
Ι
C
Base-emitter saturation voltage
I
C
=
ƒ(
V
BEsat
),
h
FE
= 10
10
3
mA
BCW 65/66
EHP00394
Collector cutoff current
I
CBO
=
ƒ(
T
A
)
V
CB
=
V
CEmax
10
5
nA
BCW 65/66
EHP00393
Ι
C
10
2
5
150 ˚C
25 ˚C
-50 ˚C
Ι
CB0
10
4
5
10
3
10
5
1
5
10
2
5
max
10
5
0
typ
10
5
1
10
-1
0
1
2
3
V
V
BE sat
4
10
0
0
50
100
˚C
T
A
150
4
2007-04-20
BCW66
Transition frequency
f
T
=
ƒ(
I
C
)
V
CE
= 5 V
10
3
MHz
f
T
5
60
BCW 65/66
EHP00391
Collector-base capacitance
C
cb
=
ƒ(
V
CB
)
Emitter-base capacitance
C
eb
=
ƒ(
V
EB
)
BCW66: - - - , BCW66K: ____
75
pF
V
CB
/V
EB
55
50
45
40
35
30
CEB: BCW66
CEB: BCW66K
CCB: BCW66
CCB: BCW66K
10
2
5
25
20
15
10
5
10
1
10
0
10
1
10
2
mA
10
3
0
0
2
4
6
8
10
12
14
16
V
20
Ι
C
C
CB
/C
EB
Total power dissipation
P
tot
=
ƒ(
T
S
)
BCW66: - - - , BCW66K: ____
Permissible Pulse Load
P
totmax
/
P
totDC
=
ƒ(
t
p
)
10
3
P
tot max
5
P
tot DC
BCW 65/66
EHP00392
550
mW
450
400
t
p
D
=
T
t
p
T
BCW66K
BCW66
P
tot
350
300
250
200
150
100
50
0
0
15
30
45
60
75
90 105 120
10
2
5
10
1
5
D
=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
°C
150
T
S
10
0
10
-6
10
-5
10
-4
10
-3
10
-2
s
t
p
10
0
5
2007-04-20
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