BFG196
NPN Silicon RF Transistor*
•
For low noise, low distortion broadband
amplifiers in antenna and telecommunications
systems up to 1.5 GHz at collector currents from
20 mA to 80 mA
•
Power amplifier for DECT and PCN systems
•
f
T
= 7.5 GHz,
F
= 1.3 dB at 900 MHz
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
* Short term description
4
2
1
3
ESD
(Electrostatic
discharge)
sensitive device, observe handling precaution!
Type
BFG196
Maximum Ratings
Parameter
Marking
Pin Configuration
BFG196 1 = E 2 = B 3 = E 4 = C -
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
Symbol
R
thJS
Package
-
SOT223
Value
12
20
20
2
150
15
800
150
-65 ... 150
-65 ... 150
Value
≤
75
Unit
K/W
mW
°C
mA
Unit
V
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
2)
T
S
≤
90°C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
3)
1
Pb-containing
3
For
package may be available upon special request
2
T
is measured on the collector lead at the soldering point to the pcb
S
calculation of
R
thJA
please refer to Application Note Thermal Resistance
2007-04-20
1
BFG196
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 20 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 1 V,
I
C
= 0
DC current gain-
I
C
= 50 mA,
V
CE
= 8 V, pulse measured
h
FE
70
100
140
I
EBO
-
-
1
I
CBO
-
-
100
I
CES
-
-
100
V
(BR)CEO
12
-
-
typ.
max.
Unit
V
µA
nA
µA
-
2007-04-20
2
BFG196
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
AC Characteristics
(verified by random sampling)
Transition frequency
f
T
I
C
= 70 mA,
V
CE
= 8 V,
f
= 500 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz,
V
BE
= 0 ,
emitter grounded
Collector emitter capacitance
V
CE
= 10 V,
f
= 1 MHz,
V
BE
= 0 ,
base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz,
V
CB
= 0 ,
collector grounded
Noise figure
I
C
= 20 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
f
= 900 MHz
I
C
= 20 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
f
= 1.8 GHz
Power gain, maximum available
1)
I
C
= 50 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 900 MHz
I
C
= 50 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
Transducer gain
I
C
= 50 mA,
V
CE
= 8 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 900 MHz
I
C
= 50 mA,
V
CE
= 8 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 1.8 GHz
1
G
5
-
7.5
0.85
-
1.3
GHz
pF
C
cb
C
ce
-
0.45
-
C
eb
-
4.2
-
F
-
-
G
ma
-
-
|S
21e
|
2
-
-
12
6.5
-
-
14.5
9
-
-
1.3
2.3
-
-
dB
dB
1/2
ma
= |
S
21
/
S
12
| (k-(k²-1)
)
2007-04-20
3
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