SMP600G-FM
MECHANICAL DATA
Dimensions in mm.
P.I.N. PHOTODIODE
FEATURES
•
•
•
•
•
•
•
•
•
HIGH SENSITIVITY
VISIBLE AND UV BLIND
PHOTODIODE ISOLATED FROM PACKAGE
EXCELLENT LINEARITY
LOW NOISE
WIDE SPECTRAL RESPONSE
RG850 INTEGRAL OPTICAL FI TER
L
TO39 HERMETIC METAL CAN PACKAGE
EMI SCREENING MESH AVAILABLE
WINDOW
Ø 5.9 ± 0.1
Ø 9.1 ± 0.2
Ø 8.1 ± 0.1
SENSITIVE
SURFACE
Ø 0.45
LEAD
5.08 ± 0.2
3
2
1
20
3.8 ± 0.2
DESCRIPTION
The SMP600G-FM is a Silicon P.I.N. photodiode
incorporated in a hermetic metal can package. The
electrical terminations are via two leads of diameter 0.018"
on a pitch centre diameter of 0.2". The can structure
incorporates an optical filter that only transmits infra-red
light. The photodiode is electrically isolated from the
package, which has a separate earth lead.
The larger photodiode active area provides greater
sensitivity than the SMP550 range of devices, with a slight
reduction in speed. Inherent in the device geometry is a
reduction in the receiving angle. The photodiode structure
has been optimised for high sensitivity, light measurement
applications. The metal can, isolated photodiode and
optional screening mesh ensure a rugged device with a
high degree of immunity to conducted and radiated
electrical interference.
TO-39 Package
Pin 1 – Anode
Pin 2 – Cathode
Pin 3 – Case
ABSOLUTE MAXIMUM R
ATINGS
(Tcase = 25°C unless otherwise stated)
Operating temperature range
Storage temperature range
Temperature coefficient of responsively
Temperature coefficient of dark current
Reverse breakdown voltage
Semelab plc
.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
-40°C to +70°C
-45°C to +80°C
0.35% per °C
x2 per 8°C rise
60V
Prelim. 1/98
SMP600G-FM
CHARACTERISTICS
(Tamb=25°C unless otherwise stated)
Characteristic
Test Conditions.
Responsively
Active Area
Dark Current
Breakdown Voltage
Capacitance
E = 0 Dark
E = 0 Dark
E = 0 Dark
E = 0 Dark
E = 0 Dark
30V Reverse
50Ω
900nm
Directional characteristics
Min.
0.45
Typ.
0.55
15
Max.
Units
A/W
mm
2
λ
at 900nm
1V Reverse
10V Reverse
10µA Reverse
0V Reverse
20V Reverse
60
2
6
nA
V
pF
80
90
25
12
20x10
-14
0.45
Rise Time
NEP
ns
W/√Hz
Directional Characteristics
1
80°
70°
Angle from sensor
to illumination
1
0.9
0.8
Normalised Incident Power
60°
0.8
50°
0.6
0.7
0.6
0.5
0.4
0.3
0.2
40°
30°
0.4
20°
0.2
10°
0.1
0
0
0
0.2
0.4
0.6
0.8
1
Normalised incident power
0
10
20
30
40
50
60
70
80
90
Angle from sensor to illumination
Spectral Response
100
Relative Responsivity (%)
80
60
40
20
0
0
200
400
600
Wavelength (nm)
800
1000
1200
Semelab plc
.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/98
PCB Design
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