CHENMKO ENTERPRISE CO.,LTD
AXIAL LEAD
SILICON PLANAR POWER ZENER DIODES
VOLTAGE RANGE 0.8V TO 200V
BZX55C 0V8PT
THRU
BZX55C 200PT
FEATURE
*
*
*
*
*
High temperature soldering type.
ESD rating of class 3(>16 kV) per human body model.
Silicon planar zener diodes.
Silcon-oxide passivated junction.
Low temperature coefficient voltage
.022 (0.56)
DIA.
.018 (0.46)
1.02 (26.0)
MIN.
DO-35
MECHANICAL
*
*
*
*
*
Axial-lead hermetically sealed package.
DO-35 Packaging.
Cathode indicated by polarity band.
Mounting position: Any.
Weight: Approx. 0.13g.
.165 (4.2)
MAX.
.079 (2.0)
MAX.
1.02 (26.0)
MIN.
DIA.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
o
Dimensions in inches and (millimeters)
DO-35
MAXIMUM RATINGES
( At T
A
= 25
o
C unless otherwise noted )
RATINGS
Zener Current ( see Table "Characteristics" )
Max. Steady State Power Dissipation @T
L
=75
o
C,Lead Length=3/8"
Max. Operating Temperature Range
Storage Temperature Range
SYMBOL
-
P
D
T
J
T
STG
VALUE
-
500
+175
-55 to +175
UNITS
-
mW
o
C
C
o
ELECTRICAL CHARACTERISTICS
( At T
A
= 25
o
C unless otherwise noted )
CHARACTERISTICS
Thermal Resistance Junction to Ambient
Max. Instantaneous Forward Voltage at I
F=
100mA
SYMBOL
R
JA
MIN.
-
-
TYP.
-
-
MAX.
300
1.0
UNITS
o
C/W
V
F
Volts
2001-6
NOTES : 1. The numbers listd have a standaerd tolerance on the normal zener voltage of +5%, Suffix " B "= +2% tolerance.
2. The zener impedance is derived from 1KHz AC voltage, which results when an AC current having an RMS value equal to 10%
of DC zener current (I
ZT
or I
ZK
) is superimposed on I
ZT
or I
ZK
. Zener impedance is measured at two points to insure a sharp knee
on the breakdown curve to eliminate unstable units.
3. Valid provided that electrodes at distance of 8mm from case are kept ambient temperature.
4. Measured under thermal equilibrium and DC test conditions.
5. The rating listd in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave
or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, I
ZT
.
ELECTRICAL CHARACTERISTIC ( BZX55C 0V8PT THRU BZX55C 200PT )
TYPE
Nominal
Zener
voltage
at
I
ZT
V
Z
(V)
68
75
82
91
100
110
120
130
150
160
180
200
Zener Voltage Range
Test
current Zener Voltage
at
I
ZT
(mA)
V
Z
(V)
2.5
2.5
2.5
1
1
1
1
1
1
1
1
1
64 ~ 72
70 ~ 79
77 ~ 87
85 ~ 96
94 ~ 106
104 ~ 116
114 ~ 117
124 ~ 141
138 ~ 156
153 ~ 171
168 ~ 191
188 ~ 212
Maximum Zener impedance
Z
ZT
at I
ZT
( )
200
250
300
450
450
600
800
950
1250
1400
1700
2000
at
I
ZK
(mA)
0.5
0.5
0.25
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
Z
ZK
( )
1000
1000
1500
2000
5000
5000
5500
6000
6500
7000
8500
10000
Maximum
Type
reverse leakage current temperature
coefficient
at
I
R
I
R
(2)
at V
R
T
A
= 25
o
C
o
(uA) (uA)
(V)
VZ
(%/ C)
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
10
10
10
10
10
10
10
10
10
10
10
10
51
56
62
68
75
82
91
100
110
120
130
150
0.04~0.12
0.04~0.12
0.05~0.12
0.05~0.12
0.05~0.12
0.05~0.12
0.05~0.12
0.05~0.12
0.05~0.12
0.05~0.12
0.05~0.12
0.05~0.12
Maximum
regulator
current
at
Note 2
I
ZM
(mA)
5.9
5.3
4.8
4.4
4.0
3.6
3.3
3.0
2.7
2.4
2.2
2.0
BZX55C 68PT
BZX55C 75PT
BZX55C 82PT
BZX55C 91PT
BZX55C 100PT
BZX55C 110PT
BZX55C 120PT
BZX55C 130PT
BZX55C 150PT
BZX55C 160PT
BZX55C 180PT
BZX55C 200PT
NOTES : 1. Tested with puless tp=20mS.
2. Vaild provided that leads are kept at ambient temperature at a distance of 8 mm from case.
3. The BZX55C 0V8 is a silicon diode with operation in forward direction. hence, the index of all parameter should be "F"
instead of "Z". Connect the cathode lead to the negative pole.
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