SILICON EPITAXIAL
NPN TRANSISTOR
BFT29 / BFT30 / BFT31
•
•
•
Hermetic TO-18 Metal Package
Designed For General Purpose Amplifiers, and Audio Driver
Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated)
BFT29
VCBO
VCEO
VEBO
IC
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
TA = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
90V
80V
BFT30
BFT31
70
60
60
50
5V
1.0A
360mW
2mW/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
R
θJA
Parameters
Thermal Resistance, Junction To Ambient
Max
486
Units
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Semelab
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 8963
Issue 1
Page 1 of 3
Website:
http://www.semelab-tt.com
SILICON EPITAXIAL
NPN TRANSISTOR
BFT29 / BFT30 / BFT31
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Symbols
V(BR)CBO
Parameters
Test Conditions
IC = 10µA
IE = 0
BFT29
BFT30
BFT31
BFT29
Min.
90
70
60
80
60
50
5
Typ.
Max.
Units
Collector-Base Breakdown Voltage
V
V(BR)CEO
(1)
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector-Cut-Off Current
IC = 10mA
IB = 0
IE = 10µA
BFT30
BFT31
V
V(BR)EBO
ICBO
IC = 0
V
100
nA
VCB = Rated VCEO, IE = 0
BFT29
IC = 1.0mA
VCE = 10V
BFT30
BFT31
BFT29
IC = 10mA
VCE = 10V
BFT30
BFT31
BFT29
IC = 100mA
VCE = 10V
25
45
45
30
50
50
50
75
100
30
50
50
20
25
25
250
250
300
hFE
(1)
Forward-Current Transfer Ratio
BFT30
BFT31
BFT29
IC = 500mA
VCE = 10V
BFT30
BFT31
BFT29
IC = 1.0A
VCE = 10V
BFT30
BFT31
BFT29
0.95
0.75
0.75
1.6
1.0
1.0
1.1
2.0
V
IC = 500mA
IB = 50mA
VCE(sat)
(1)
BFT30
BFT31
BFT29
Collector-Emitter Saturation
Voltage
IC = 1.0A
IB = 100mA
IC = 500mA
IC = 1.0A
BFT30
BFT31
VBE(sat)
(1)
Base-Emitter Saturation Voltage
IB = 50mA
IB = 100mA
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 8963
Issue 1
Page 2 of 3
SILICON EPITAXIAL
NPN TRANSISTOR
BFT29 / BFT30 / BFT31
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
IC = 40mA
f = 20MHz
Output Capacitance
VCB = 10V
f = 1.0MHz
IE = 0
8.5
10
pF
VCE = 10V
80
95
MHz
Cobo
Notes
(1) Pulse Width
≤
300us,
δ ≤
2%
MECHANICAL DATA
Dimensions in mm (inches)
5 .8 4 (0 .2 3 0 )
5 .3 1 (0 .2 0 9 )
4 .9 5 (0 .1 9 5 )
4 .5 2 (0 .1 7 8 )
0 .4 8 (0 .0 1 9 )
0 .4 1 (0 .0 1 6 )
d ia .
2 .5 4 (0 .1 0 0 )
N o m .
!
TO-18 (TO-206AA)
Pin 1 - Emitter
Pin 2 - Base
Pin 3 - Collector
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
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2
3
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4
Website:
http://www.semelab-tt.com
Document Number 8963
Issue 1
Page 3 of 3
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