LAB
TO247–AD Package Outline.
Dimensions in mm (inches)
4.69
5.31
1.49
2.49
(0.185)
(0.209)
(0.059)
(0.098)
6.15
(0.242)
BSC
15.49 (0.610)
16.26 (0.640)
SEME
BFC45
4TH GENERATION MOSFET
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
20.80 (0.819)
21.46 (0.845)
3.55 (0.140)
3.81 (0.150)
4.50
(0.177)
M ax.
1
2
3
1.65 (0.065)
2.13 (0.084)
2.87 (0.113)
3.12 (0.123)
0.40 (0.016)
0.79 (0.031)
1.01 (0.040)
1.40 (0.055)
2.21 (0.087)
2.59 (0.102)
5.25 (0.215)
BSC
V
DSS
I
D(cont)
R
DS(on)
800V
9.0A
Ω
1.25Ω
Terminal 1
Gate
Terminal 3
Source
19.81 (0.780)
20.32 (0.800)
Terminal 2
Drain
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
DSS
I
D
I
DM
V
GS
P
D
T
J
, T
STG
T
L
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Total Power Dissipation @ T
case
= 25°C
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
800
9.0
36
±30
240
–55 to 150
300
V
A
A
V
W
°C
STATIC ELECTRICAL RATINGS
(T
case
= 25°C unless otherwise stated)
BV
DSS
I
DSS
I
GSS
V
GS(TH)
I
D(ON)
R
DS(ON)
Characteristic
Drain – Source Breakdown Voltage
Zero Gate Voltage Drain Current
(V
GS
= 0V)
Gate – Source Leakage Current
Gate Threshold Voltage
On State Drain Current
2
Drain – Source On State Resistance
2
Test Conditions
V
GS
= 0V , I
D
= 250µA
V
DS
= V
DSS
V
DS
= 0.8V
DSS
, T
C
= 125°C
V
GS
= ±30V , V
DS
= 0V
V
DS
= V
GS
, I
D
= 1.0mA
V
DS
> I
D(ON)
x R
DS(ON)
Max
V
GS
= 10V
V
GS
= 10V , I
D
= 0.5 I
D
[Cont.]
2
9
1.25
Min.
800
Typ.
Max. Unit
V
250
1000
±100
4
µA
nA
V
A
Ω
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 4/94
LAB
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
R
G
= 1.8Ω
Min.
Typ.
1500
235
85
68
7.6
33
13
15
54
20
Max. Unit
1800
330
127
105
11
49
26
29
81
39
ns
nC
pF
SEME
BFC45
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Continuous Source Current
Pulsed Source Current
1
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
(Body Diode)
(Body Diode)
V
GS
= 0V , I
S
= – I
D
[Cont.]
I
S
= – I
D
[Cont.] , dl
s
/ dt = 100A/µs
240
1.7
480
3.4
Min.
Typ.
Max. Unit
9.0
A
36
1.3
960
7
V
ns
µC
SAFE OPERATING AREA CHARACTERISTICS
Characteristic
SOA1
Safe Operating Area
Test Conditions
V
DS
= 0.4V
DSS
, t = 1 Sec.
I
DS
= P
D
/ 0.4V
DSS
V
DS
= P
D
/ I
D
[Cont.]
I
DS
= I
D
[Cont.] , t = 1 Sec.
Min.
240
Typ.
Max. Unit
W
SOA2
I
LM
Safe Operating Area
Inductive Current Clamped
240
36
W
A
THERMAL CHARACTERISTICS
R
θJC
R
θJA
Characteristic
Junction to Case
Junction to Ambient
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
Min.
Typ.
Max. Unit
0.51
°C/W
40
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 4/94
Analogue and Mixed Signal
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