BTA40, BTA41, BTB41
40 A standard TRIACs
Features
■
■
■
■
■
A2
High current TRIAC
Low thermal resistance with clip bonding
High commutation capability
BTA series UL1557 certified (File ref: 81734)
Packages are RoHS (2002/95/EC) compliant
A1
G
A2
G
A1
Applications
■
■
On/off function in static relays, heating
regulation, induction motor starting circuits
Phase control operations in light dimmers,
motor speed controllers, and similar
RD91 insulated
(BTA40)
A2
Description
A1
A2
A1
G
A2
G
Available in high power packages, the
BTA/BTB40-41 series is suitable for general
purpose AC switching.
The BTA series provides an insulated tab (rated at
2500 V rms).
TOP3 insulated
(BTA41)
TOP3
(BTB41)
Table 1.
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
Device summary
Parameter
On-state rms current
Repetitive peak off-state voltage
Triggering gate current
BTA40
(1)
40
600 and 800
50
BTA41
(1)
41
600 and 800
50
BTB41
41
600 and 800
50
Unit
A
V
mA
1. Insulated package
August 2009
Doc ID 7469 Rev 8
1/9
www.st.com
9
Characteristics
BTA40, BTA41, BTB41
1
Table 2.
Symbol
I
T(RMS)
Characteristics
Absolute maximum ratings
Parameter
On-state rms current
(full sine wave)
Non repetitive surge peak on-state
current (full cycle, T
j
initial = 25 °C)
I
²
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
≤
100 ns
Non repetitive surge peak off-state
voltage
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
TOP3
RD91 / TOP ins.
F = 50 Hz
F = 60 Hz
t
p
= 10 ms
F = 120 Hz
t
p
= 10 ms
t
p
= 20 µs
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
T
c
= 95 °C
T
c
= 80 °C
t = 20 ms
t = 16.7 ms
400
A
420
1000
50
V
DSM
/V
RSM
+
100
8
1
- 40 to + 150
- 40 to + 125
A
²
s
A/µs
V
A
W
°C
Value
40
Unit
A
I
TSM
I
²
t
dI/dt
V
DSM
/V
RSM
I
GM
P
G(AV)
T
stg
T
j
Table 3.
Symbol
I
GT (1)
V
GT
V
GD
I
H
(2)
I
L
dV/dt
(2)
(dV/dt)c
(2)
Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Parameter
I - II - III
IV
ALL
V
D
= V
DRM
R
L
= 3.3 kΩ T
j
= 125 °C
I
T
= 500 mA
I - III - IV
I
G
= 1.2 I
GT
V
D
= 67% V
DRM
gate open
(dI/dt)c = 20 A/ms
MAX.
II
T
j
= 125 °C
T
j
= 125 °C
MIN.
MIN.
160
500
10
V/µs
V/µs
ALL
MAX.
MAX.
MIN.
MAX.
Value
50
100
1.3
0.2
80
70
mA
Unit
mA
V
V
mA
V
D
= 12 V
R
L
= 33
Ω
1. Minimum I
GT
is guaranted at 5% of I
GT
max.
2. for both polarities of A2 referenced to A1
2/9
Doc ID 7469 Rev 8
BTA40, BTA41, BTB41
Table 4.
Symbol
V
T (1)
V
t0 (2)
R
d (2)
I
DRM
I
RRM
I
TM
= 60 A
t
p
= 380 µs
Characteristics
Static characteristics
Test conditions
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
MAX.
MAX.
MAX.
MAX.
5
mA
Value
1.55
0.85
10
5
Unit
V
V
mΩ
µA
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
1. Minimum I
GT
is guaranted at 5% of I
GT
max.
2. for both polarities of A2 referenced to A1
Table 5.
Symbol
R
th(j-c)
R
th(j-a)
Thermal resistance
Test conditions
RD91 (insulated) / TOP3 insulated
Junction to case (AC)
TOP3
Junction to ambient
TOP3 / TOP3 insulated
0.6
50
°C/W
Value
0.9
°C/W
Unit
Figure 1.
Maximum power dissipation versus Figure 2.
on-state rms current (full cycle)
45
40
On-state rms current versus case
temperature (full cycle)
P(W)
50
I
T(RMS)
(A)
α=180°
BTB41
40
35
30
BTA40
BTA41
30
25
20
20
15
180°
10
I
T(RMS)
(A)
0
0
5
10
15
20
25
30
α
α
10
5
0
T
C
(°C)
0
25
50
75
100
125
35
40
Figure 3.
Relative variation of thermal
impedance versus pulse duration
Figure 4.
On-state characteristics (maximum
values)
K=[Z
th
/R
th
]
1.E+00
Z
th(j-c)
I
TM
(A)
400
T
j
max.
V
to
= 0.85V
R
d
= 10 m
Ω
100
T
j
= T
j
max.
1.E-01
Z
th(j-a)
BTA / BTB41
T
j
= 25°C.
10
1.E-02
1.E-03
1.E-03
1.E-02
1.E-01
t
p
(s)
1.E+00
1.E+01
1.E+02
1.E+03
V
TM
(V)
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Doc ID 7469 Rev 8
3/9
Characteristics
BTA40, BTA41, BTB41
Figure 5.
Surge peak on-state current versus Figure 6.
number of cycles
Non-repetitive surge peak on-state
current for a sinusoidal pulse and
corresponding value of I
2
t
2
2
I
TSM
(A)
450
400
350
300
250
200
150
100
50
0
1
10
100
1000
Repetitive
T
C
=70°C
Non repetitive
T
j
initial=25°C
t=20ms
I
TSM
(A), I t (A s)
10000
dI/dt limitation:
50A/µs
I
TSM
T
j
initial=25 °C
Pulse width tp < 10 ms
I
2
t
One cycle
1000
Number of cycles
100
0.01
0.10
t
p
(ms)
1.00
10.00
Figure 7.
Relative variation of gate trigger,
Figure 8.
holding and latching current versus
junction temperature
2.0
1.8
Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values)
I
GT
,I
H
,I
L
[T
j
] / I
GT
,I
H
,I
L
[T
j
=25°C]
2.5
(dI/dt)c [(dV/dt)c] / specified (dI/dt)c
2.0
I
GT
1.6
1.4
1.5
I
H
& I
L
Typical values
1.2
1.0
0.8
1.0
0.5
T
j
(°C)
0.0
-40
-20
0
20
40
60
80
100
120
140
0.6
0.4
0.1
1.0
(dV/dt)c (V/µs)
10.0
100.0
Figure 9.
Relative variation of critical rate of decrease of main current versus (dV/dt)c
(dI/dt)c [T
j
] / (dI/dt)c [T
j
specified]
6
5
4
3
2
1
T
j
(°C)
0
0
25
50
75
100
125
4/9
Doc ID 7469 Rev 8
BTA40, BTA41, BTB41
Ordering information scheme
2
Ordering information scheme
Figure 10. Ordering information scheme
BT A 40 - 600 B RG
TRIAC series
Insulation
A = insulated
B = non-insulated
Current
40 = 40 A in RD91
Voltage
600 = 600 V
800 = 800 V
Sensitivity and type
B = 50 mA standard
Packing mode
RG = Tube
Blank = Bulk
Doc ID 7469 Rev 8
5/9
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