SILICON PLANAR EPITAXIAL
NPN/PNP TRANSISTORS
BUX77A-220M
BUX78A-220M
•
•
•
High Power
Hermetic TO220 Isolated Metal Package
Ideally suited for Driver Circuits, Switching
and Amplifier Applications
Screening Options Available
•
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
BUX77A
NPN
100V
80V
6V
BUX78A
PNP
-100V
-80V
-6V
VCBO
VCEO
VEBO
IC
IB
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Base Current
TC = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
8A
2A
50W
0.29W/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
R
θJC
Parameters
Thermal Resistance, Junction To Case
Min.
Typ.
Max.
3.5
Units
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 5339
Issue 4
Page 1 of 3
Website:
http://www.semelab-tt.com
SILICON PLANAR EPITAXIAL
NPN/PNP TRANSISTORS
BUX77A-220M / BUX78A-220M
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
(1)
Symbols
V(BR)CEO
V(BR)CES
V(BR)EBO
ICEO
ICBO
IEBO
(2)
Parameters
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Test Conditions
IC = 50mA
IC = 2mA
IE = 1.0mA
VCE = 60V
VCB = 80V
IB = 0
VBE = 0
IC = 0
IB = 0
IE = 0
TC = 150°C
VEB = 4V
IC = 0.5A
IC = 2A
IC = 0
VCE = 5V
VCE = 5V
VCE = 5V
VCE = 5V
TC = -40°C
Min.
80
100
6
Typ
Max.
Units
V
10
0.5
150
0.5
50
50
30
25
1.0
V
1.3
250
µA
hFE
(2)
Forward-current transfer
ratio
IC = 5A
IC = 1.0A
VCE(sat)
VBE(sat)
(2)
(2)
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
IC = 5A
IC = 5A
IB = 0.5A
IB = 0.5A
DYNAMIC CHARACTERISTICS
|hfe|
Small signal forward-current
transfer ratio
Turn-On Time
IC = 0.5A
f = 20MHz
IC = 5A
IB1 = 0.5A
IC = 5A
IB1 = - IB2 = 0.5A
VCC = 40V
VCC = 40V
0.3
0.4
µs
1.1
2.5
VCE = 5V
1.5
ton
toff
Turn-Off Time
Notes
(1) For PNP (BUX78A) device, voltage and current values are negative
(2) Pulse Width
≤
300us,
δ ≤
2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 5339
Issue 4
Page 2 of 3
SILICON PLANAR EPITAXIAL
NPN/PNP TRANSISTORS
BUX77A-220M / BUX78A-220M
MECHANICAL DATA
Dimensions in mm (inches)
4.83 (0.190)
5.33 (0.210)
0.64 (0.025)
0.89 (0.035)
10.92 (0.430)
10.41 (0.410)
13.21 (0.52)
13.72 (0.54)
13.21 (0.52)
13.72 (0.54)
3.56 (0.140)
Dia
3.81 (0.150)
10.41 (0.410)
10.92 (0.430)
1
2
3
12.70 (0.500)
14.73 (0.750)
0.89 (0.035)
Dia.
1.27 (0.050)
2.54 (0.100)
BSC
3.05 (0.120)
BSC
TO220M (TO-257AB)
Pin 1 - Base
Pin 2 - Collector
Pin 3 - Emitter
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 5339
Issue 4
Page 3 of 3
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