BR2508(W) datasheet, PDF - EEWORLD Datasheet

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BR2508(W): DescriptionBridge Rectifier Diode, 25A, 800V V(RRM),; CategoryDiscrete semiconductor diode; File Size75KB，2 Pages; ManufacturerGalaxy Semi-Conductor Co., Ltd.; Environmental Compliance

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BR2508(W) Overview

Bridge Rectifier Diode, 25A, 800V V(RRM),

BR2508(W) Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Galaxy Semi-Conductor Co., Ltd.
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
Maximum non-repetitive peak forward current	300 A
Number of components	4
Maximum operating temperature	150 °C
Maximum output current	25 A
Maximum repetitive peak reverse voltage	800 V
surface mount	NO

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FEATURES

GALAXY ELECTRICAL

BR25005(W) - - - BR2510(W)

VOLTAGE RANGE: 50 --- 1000 V

CURRENT: 25.0 A

SILICON BRIDGE RECTIFIERS

Rating to 1000V PRV

Surge overload rating to

300

Amperes peak

Ideal for printed circuit board

Reliable low cost construction utilizing molded

BR - W

METAL HEAT SINK

.452

(11.5)

MAX

.042(1.1)

.090(2.0)

PLASTIC

.480(12.2)

.425(10.8)

plastic technique results in inexpensive product

Lead solderable per MIL-STD-202 method 208

Mounting: thru hole for # 8 screw

mounting

1.181(30.0)

1.102(28.0)

HOLE FOR

NO.8 SCREW

AC

.732(18.6)

.692(17.6)

-

+

.468(11.9)

.429(10.9)

AC

1.181(30.0)

1.102(28.0)

.732(18.6)

.692(17.6)

.033x 250

(0.8x 6.4)

inch(mm)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.

BR

25005

(W)

Maximum recurrent peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forw ard

output current

@T

A

=50

BR

2501

(W)

100

70

100

BR

2502

(W)

200

140

200

BR

2504

(W)

400

280

400

25.0

BR

2506

(W)

600

420

600

BR

2508

(W)

800

560

800

BR

2510

(W)

1000

700

1000

UNITS

V

A

V

RRM

V

RMS

V

DC

I

F(AV)

50

35

50

Peak forw ard surge current

8.3ms single half-sine-w ave

superimposed on rated load

Maximum instantaneous forw ard voltage

at

12.5

A

Maximum reverse current

at rated DC blocking voltage

@T

A

=25

@T

A

=100

I

FSM

300.0

A

V

F

I

R

T

J

T

STG

1.1

5.0

0.5

- 55 ---- + 150

V

μ

A

mA

Operating junction temperature range

Storage temperature range

www.galaxycn.com

Document Number 0287050

BL

GALAXY ELECTRICAL

1.

BR2508(W) Related Products

	BR2508(W)	BR2501(W)	BR2504(W)	BR2502(W)	BR2510(W)	BR25005(W)
Description	Bridge Rectifier Diode, 25A, 800V V(RRM),	Bridge Rectifier Diode, 25A, 100V V(RRM),	Bridge Rectifier Diode, 25A, 400V V(RRM),	Bridge Rectifier Diode, 25A, 200V V(RRM),	Bridge Rectifier Diode, 25A, 1000V V(RRM),	Bridge Rectifier Diode, 25A, 50V V(RRM),
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Maker	Galaxy Semi-Conductor Co., Ltd.	Galaxy Semi-Conductor Co., Ltd.	Galaxy Semi-Conductor Co., Ltd.	Galaxy Semi-Conductor Co., Ltd.	Galaxy Semi-Conductor Co., Ltd.	Galaxy Semi-Conductor Co., Ltd.
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V
Maximum non-repetitive peak forward current	300 A	300 A	300 A	300 A	300 A	300 A
Number of components	4	4	4	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Maximum output current	25 A	25 A	25 A	25 A	25 A	25 A
Maximum repetitive peak reverse voltage	800 V	100 V	400 V	200 V	1000 V	50 V
surface mount	NO	NO	NO	NO	NO	NO

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