P4KE
400W Unidirectional Transient Voltage Suppressor Diodes
Dimensions in mm.
ø2.6
±0.1
DO-41
(Plastic)
ø0.8
±0.05
Peak Pulse
Power Rating
At 1ms. Exp.
400 W
R
5
+0.2
-0
58.5
±0.5
• Glass passivated junction
Mounting instructions
1. Min. distance from body to soldering point,
4 mm.
2. Max. solder temperature, 350 °C.
3. Max. soldering time, 3.5 sec.
4. Do not bend lead at a point closer than
2 mm. to the body.
• Low Capacitance AC signal protection
• Response time typically < 1 ns.
• Molded case
• The plastic material carries
U/L recognition 94 V-0
• Terminal: Axial leads
Maximum Ratings, According to IEC Publication No. 134
P
pp
I
FSM
T
j
T
stg
Peak pulse power with 10/1000 µs
exponential pulse
Non repetitive surge peak forward
current (t = 8.3 msec.)
(Jedec Method)
(Note 1)
400 W
40 A
– 65 to + 175 °C
– 65 to + 175 °C
1W
Operating temperature range
Storage temperature range
P
M(AV)
Steady state Power dissipation (l = 10 mm)
Electrical Characteristics at Tamb = 25 °C
V
F
R
thj-l
Max. forward voltage drop at I
F
= 25 A
Max. thermal resistance (l = 10 mm.)
Maximum Reverse
Leakage Current
I
RM
at
V
RM
(1)
Breakdown Voltage
V
BR
at
(V)
3.5 V
60 °C/W
Max. Clamping Voltage
I
pp
V
CL
at
max. 1ms. Expo.
Type
Unidirectional
P4KE18
P4KE18A
P4KE200A
P4KE550
I
R
(µA)
5
5
5
1
(V)
14.5
15.3
171
495
Min.
16.2
17.1
190
550
Nom.
18
18
200
610
Max.
19.8
18.9
210
671
(mA)
1
1
1
0.1
(V)
26.5
25.2
274
760
(A)
15.1
16
1.5
0.4
(1): Tested with pulses.
Pulse test: tp
£
ms;
d
<2%
Sep-08
P4KE
Rating And Characteristic Curves
DERATING CURVE
125
P
PP
, Peak Pulse Power in % of 25 °C.
t - time
I
pp
- Peak Pulse Current - % I
pp
100
I
pp
100
75
50
I
pp
/2
50
25
10 µs
1 ms
1
0
0
25
50
75 100 125 150 175
Pulse wave form 10/1000
Temperature in °C
PULSE RATING CURVE
TYPICAL JUNCTION CAPACITANCE
P
pp
, Peak Pulse Power (W)
C
j
, Junction Capacitance (pF)
10
5
10
4
10
4
10
3
Measured at V
BR
and 1MHz.
10
3
10
2
10
100ns
2
10
1µs
10µs
100µs
1ms
1
10
10
2
10
3
Pulse Time - t
V
BR
- Breakdown voltage (V)
Sep-08
MEMS sensors
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