TetraFET
D2009UK
ROHS COMPLIANT
METAL GATE RF SILICON FET
MECHANICAL DATA
B
H
C
2 3
1
A
D
E
5 4
F
G
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W – 28V – 1GHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
J
K
I
N
M
O
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW C
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
DQ
PIN 1
PIN 3
PIN 5
SOURCE (COMMON) PIN 2
DRAIN 2
PIN 4
GATE 1
DRAIN 1
GATE 2
DIM
mm
A
16.38
B
1.52
C
45°
D
6.35
E
3.30
F
14.22
G 1.27 x 45°
H
1.52
I
6.35
J
0.13
K
2.16
M
1.52
N
5.08
O
18.90
Tol.
0.26
0.13
5°
0.13
0.13
0.13
0.13
0.13
0.13
0.02
0.13
0.13
MAX
0.13
Inches
0.645
0.060
45°
0.250
0.130
0.560
0.05 x 45°
0.060
0.250
0.005
0.085
0.060
0.200
0.744
Tol.
0.010
0.005
5°
0.005
0.005
0.005
0.005
0.005
0.005
0.001
0.005
0.005
MAX
0.005
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
•
VHF/UHF COMMUNICATIONS
from 50 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
* Per Side
Semelab plc.
Power Dissipation
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current *
Storage Temperature
Maximum Operating Junction Temperature
58W
65V
±20V
2A
–65 to 150°C
200°C
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
Document Number 5535
Issue 1
D2009UK
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
PER SIDE
BV
DSS
I
DSS
I
GSS
V
GS(th)
g
fs
G
PS
η
VSWR
C
iss
C
oss
C
rss
Drain–Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
Input Capacitance
Output Capacitance
V
GS
= 0
V
DS
= 28V
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
P
O
= 10W
V
DS
= 28V
f = 1GHz
I
DQ
= 0.4A
I
D
= 10mA
V
GS
= 0
V
DS
= 0
V
DS
= V
GS
I
D
= 2A
1
0.36
10
40
20:1
65
Typ.
Max. Unit
V
2
1
7
mA
μA
V
S
dB
%
—
24
12
1
pF
pF
pF
TOTAL DEVICE
PER SIDE
V
DS
= 28V
V
DS
= 28V
V
GS
= –5V f = 1MHz
V
GS
= 0
V
GS
= 0
f = 1MHz
f = 1MHz
Reverse Transfer Capacitance V
DS
= 28V
* Pulse Test:
Pulse Duration = 300
μs
, Duty Cycle
≤
2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
R
THj–case
Thermal Resistance Junction – Case
Max. 3.0°C / W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
Document Number 5535
Issue 1
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