MOTOROLA
SEMICONDUCTOR
TECHNICAL DATA
500 mW DO-35 Glass
Zener Voltage Regulator Diodes
GENERAL DATA APPLICABLE TO ALL SERIES IN
THIS GROUP
MZ4614
SERIES
500 mW
DO-35 GLASS
GLASS ZENER DIODES
500 MILLIWATTS
1.8–200 VOLTS
500 Milliwatt
Hermetically Sealed
Glass Silicon Zener Diodes
TE
LE
Mechanical Characteristics:
EP C TH
R ON IS
ES T D
EN AC EV
TA T Y ICE
TI OU IS
VE R O
FO ON BS
R S OL
IN EM ET
FO IC E
R ON
M
AT DU
IO C
N TO
Rating
Symbol
PD
Specification Features:
•
Complete Voltage Range — 1.8 to 200 Volts
•
DO-204AH Package — Smaller than Conventional DO-204AA Package
•
Double Slug Type Construction
•
Metallurgically Bonded Construction
R
CASE 299
DO-204AH
GLASS
Value
500
4
MAXIMUM RATINGS
(Motorola Devices)*
O
B
CASE:
Double slug type, hermetically sealed glass
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16″ from
case for 10 seconds
FINISH:
All external surfaces are corrosion resistant with readily solderable leads
POLARITY:
Cathode indicated by color band. When operated in zener mode, cathode
will be positive with respect to anode
MOUNTING POSITION:
Any
WAFER FAB LOCATION:
Phoenix, Arizona
ASSEMBLY/TEST LOCATION:
Seoul, Korea
SO
Unit
mW
mW/°C
°C
DC Power Dissipation and TL
≤
75°C
Lead Length = 3/8″
Derate above TL = 75°C
* Some part number series have lower JEDEC registered ratings.
PL
PD , MAXIMUM POWER DISSIPATION (WATTS)
R
EA
0.7
0.6
0.5
0.4
SE
Operating and Storage Temperature Range
TJ, Tstg
– 65 to +200
HEAT
SINKS
3/8”
3/8”
0.3
0.2
0.1
0
0
20
40
60
80
100
120
140
160
180 200
TL, LEAD TEMPERATURE (°C)
Figure 1. Steady State Power Derating
Motorola TVS/Zener Device Data
500 mW DO-35 Glass Data Sheet
6-1
GENERAL DATA — 500 mW DO-35 GLASS
Designed for 250 mW applications requiring low leakage,
low impedance. Same as 1N4099 through 1N4104 and
1N4614 through 1N4627 except low noise test omitted.
•
Voltage Range from 1.8 to 10 Volts
•
Zener Impedance and Zener Voltage Specified for Low-
Level Operation at IZT = 250
µA
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified. IZT = 250
µA
and VF = 1 V Max @ IF = 200 mA for all
ELECTRICAL CHARACTERISTICS
types)
Nominal
Zener Voltage
VZ
(Note 2)
(Volts)
1.8
3
5.1
6.2
Max Zener
Impedance
ZZT
(Note 3)
(Ohms)
1200
1600
1500
1200
Max
Reverse
Current
IR
(µA)
7.5
0.8
10
10
@
(Note 5)
Test
Voltage
VR
(Volts)
1
1
3
5
Max Zener Current
IZM
(Note 4)
(mA)
120
85
55
45
Type
Number
(Note 1)
MZ4614
MZ4619
MZ4625
MZ4627
TE
NOTE 2. ZENER VOLTAGE (VZ) MEASUREMENT
Nominal Zener Voltage is measured with the device junction in the thermal equilibrium with
ambient temperature of 25°C.
NOTE 3. ZENER IMPEDANCE (ZZT) DERIVATION
The zener impedance is derived from the 60 cycle ac voltage, which results when an ac cur-
rent having an rms value equal to 10% of the dc zener current (IZT) is superimposed on IZT.
PL
R
EA
500 mW DO-35 Glass Data Sheet
6-2
EP C TH
R ON IS
ES T D
EN AC EV
TA T Y ICE
TI OU IS
VE R O
FO ON BS
R S OL
IN EM ET
FO IC E
R ON
M
AT DU
IO C
N TO
NOTE 5. REVERSE LEAKAGE CURRENT IR
Maximum zener current ratings are based on maximum zener voltage of the individual units.
Reverse leakage currents are guaranteed and are measured at VR as shown on the table.
NOTE 6. SPECIAL SELECTORS AVAILABLE INCLUDE:
A) Tighter voltage tolerances. Contact your nearest Motorola representative for more infor-
mation.
O
SE
B
SO
LE
Motorola TVS/Zener Device Data
R
NOTE 1. TOLERANCE AND VOLTAGE DESIGNATION
The type numbers shown have a standard tolerance of
±5%
on the nominal zener voltage.
NOTE 4. MAXIMUM ZENER CURRENT RATINGS (IZM)
GENERAL DATA — 500 mW DO-35 GLASS
APPLICATION NOTE — ZENER VOLTAGE
Since the actual voltage available from a given zener diode
is temperature dependent, it is necessary to determine junc-
tion temperature under any set of operating conditions in order
to calculate its value. The following procedure is recom-
mended:
Lead Temperature, TL, should be determined from:
TL =
θ
LAPD + TA.
θ
LA is the lead-to-ambient thermal resistance (°C/W) and PD is
the power dissipation. The value for
θ
LA will vary and depends
on the device mounting method.
θ
LA is generally 30 to 40°C/W
for the various clips and tie points in common use and for
printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the tie
point. The thermal mass connected to the tie point is normally
large enough so that it will not significantly respond to heat
surges generated in the diode as a result of pulsed operation
once steady-state conditions are achieved. Using the mea-
sured value of TL, the junction temperature may be deter-
mined by:
TJ = TL +
∆T
JL.
∆T
JL is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for dc power:
∆T
JL =
θ
JLPD.
θ
JL , JUNCTION-TO-LEAD THERMAL RESISTANCE (
°
C/W)
500
400
L
L
300
200
100
0
2.4–60 V
62–200 V
0
0.2
0.4
0.6
0.8
1
TE
1000
7000
5000
2000
1000
700
500
200
100
70
50
20
10
7
5
2
1
0.7
0.5
0.2
L, LEAD LENGTH TO HEAT SINK (INCH)
EP C TH
R ON IS
ES T D
EN AC EV
TA T Y ICE
TI OU IS
VE R O
O BS
I R , LEAKAGE CURRENT (
F
µ
A)
O N
R S OL
IN EM ET
FO IC E
R ON
M
AT DU
IO C
N TO
Figure 2. Typical Thermal Resistance
LE
PL
θ
VZ, the zener voltage temperature coefficient, is found from
Figures 4 and 5.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current excursions
as low as possible.
Surge limitations are given in Figure 7. They are lower than
would be expected by considering only junction temperature,
as current crowding effects cause temperatures to be ex-
tremely high in small spots, resulting in device degradation
should the limits of Figure 7 be exceeded.
O
SE
B
For worst-case design, using expected limits of IZ, limits of
PD and the extremes of TJ(∆TJ) may be estimated. Changes in
voltage, VZ, can then be found from:
∆V
=
θ
VZTJ.
SO
R
TYPICAL LEAKAGE CURRENT
AT 80% OF NOMINAL
BREAKDOWN VOLTAGE
+125°C
R
EA
0.1
0.07
0.05
0.02
0.01
0.007
0.005
0.002
0.001
3
4
5
6
7
8
9
10
11
12
13
14
15
+25°C
VZ, NOMINAL ZENER VOLTAGE (VOLTS)
Figure 3. Typical Leakage Current
Motorola TVS/Zener Device Data
500 mW DO-35 Glass Data Sheet
6-3
GENERAL DATA — 500 mW DO-35 GLASS
TEMPERATURE COEFFICIENTS
(–55°C to +150°C temperature range; 90% of the units are in the ranges indicated.)
θV
Z , TEMPERATURE COEFFICIENT (mV/
°C)
θV
Z , TEMPERATURE COEFFICIENT (mV/
°C)
+12
+10
+8
+6
+4
+2
0
–2
–4
2
3
4
5
6
7
8
9
VZ, ZENER VOLTAGE (VOLTS)
10
11
12
RANGE
VZ @ IZT
(NOTE 2)
100
70
50
30
20
10
7
5
3
2
1
10
20
30
50
VZ, ZENER VOLTAGE (VOLTS)
70
100
RANGE
VZ @ IZ (NOTE 2)
TE
+6
+4
+2
0
–2
–4
200
3
Figure 4a. Range for Units to 12 Volts
θV
Z , TEMPERATURE COEFFICIENT (mV/
°C)
200
180
160
140
120
100
EP C TH
R ON IS
ES T D
EN AC EV
TA T Y ICE
TI OU IS
VE R O
θV
Z , TEMPERATURE COEFFICIENT (mV/
°C)
FO ON BS
R S OL
IN EM ET
FO IC E
R ON
M
AT DU
IO C
N TO
Figure 4b. Range for Units 12 to 100 Volts
LE
180
190
SO
VZ @ IZ
TA = 25°C
20 mA
B
120
130
O
VZ @ IZT
(NOTE 2)
1 mA
NOTE: BELOW 3 VOLTS AND ABOVE 8 VOLTS
NOTE:
CHANGES IN ZENER CURRENT DO NOT
NOTE:
AFFECT TEMPERATURE COEFFICIENTS
5
6
7
8
VZ, ZENER VOLTAGE (VOLTS)
140
150
160
170
4
VZ, ZENER VOLTAGE (VOLTS)
1000
500
200
C, CAPACITANCE (pF)
100
50
20
10
5
2
1
1
2
5
PL
R
EA
SE
Figure 4c. Range for Units 120 to 200 Volts
Figure 5. Effect of Zener Current
TA = 25°C
0 V BIAS
C, CAPACITANCE (pF)
100
70
50
30
20
R
0.01 mA
TA = 25°C
0 BIAS
1 V BIAS
1 VOLT BIAS
10
7
5
3
2
50% OF VZ BIAS
50% OF
VZ BIAS
10
20
50
100
1
120
140
160
180
190
200
220
VZ, ZENER VOLTAGE (VOLTS)
VZ, ZENER VOLTAGE (VOLTS)
Figure 6a. Typical Capacitance 2.4–100 Volts
Figure 6b. Typical Capacitance 120–200 Volts
500 mW DO-35 Glass Data Sheet
6-4
Motorola TVS/Zener Device Data
GENERAL DATA — 500 mW DO-35 GLASS
100
70
50
30
20
10
7
5
3
2
1
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1000
10% DUTY CYCLE
20% DUTY CYCLE
5% DUTY CYCLE
Ppk , PEAK SURGE POWER (WATTS)
11 V–91 V NONREPETITIVE
1.8 V–10 V NONREPETITIVE
RECTANGULAR
WAVEFORM
TJ = 25°C PRIOR TO
INITIAL PULSE
PW, PULSE WIDTH (ms)
TE
1000
500
200
100
50
20
10
5
2
1
0.1
0.2
Figure 7a. Maximum Surge Power 1.8–91 Volts
Ppk , PEAK SURGE POWER (WATTS)
LE
1000
700
500
300
200
100
70
50
30
20
10
7
5
3
2
1
0.01
EP C TH
R ON IS
ES T D
EN AC EV
TA T Y ICE
TI OU IS
VE
Z
R
DYNAMIC IMPEDANCE (OHMS)
O
Z,
O BS
FO N
R S OL
IN EM ET
FO IC E
R ON
M
AT DU
IO C
N TO
RECTANGULAR
WAVEFORM, TJ = 25°C
VZ = 2.7 V
47 V
27 V
6.2 V
0.5
1
2
R
TJ = 25°C
iZ(rms) = 0.1 IZ(dc)
f = 60 Hz
5
10
20
B
SO
100–200 VOLTS NONREPETITIVE
0.1
1
10
100
1000
50
100
O
PW, PULSE WIDTH (ms)
IZ, ZENER CURRENT (mA)
Figure 7b. Maximum Surge Power DO-204AH
100–200 Volts
Figure 8. Effect of Zener Current on
Zener Impedance
ZZ , DYNAMIC IMPEDANCE (OHMS)
EA
PL
200
100
70
50
20
10
7
5
2
1
1
I F , FORWARD CURRENT (mA)
IZ = 1 mA
5 mA
20 mA
R
1000
700
500
SE
TJ = 25°C
iZ(rms) = 0.1 IZ(dc)
f = 60 Hz
1000
500
200
100
MAXIMUM
MINIMUM
50
20
10
5 150°C
2
25°C
0°C
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
75°C
2
3
5
7
10
20
30
50
70 100
1
VZ, ZENER VOLTAGE (VOLTS)
VF, FORWARD VOLTAGE (VOLTS)
Figure 9. Effect of Zener Voltage on Zener Impedance
Figure 10. Typical Forward Characteristics
Motorola TVS/Zener Device Data
500 mW DO-35 Glass Data Sheet
6-5
stm32/stm8
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