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2SC4617-S

Description
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size113KB,3 Pages
ManufacturerMicro Commercial Components (MCC)
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2SC4617-S Overview

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3

2SC4617-S Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.15 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)270
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
Transistor component materialsSILICON
Nominal transition frequency (fT)180 MHz
Base Number Matches1
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

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$ %    !"#
2SC4617-Q
2SC4617-R
2SC4617-S
NPN
General Purpose
Transistors
Features
Complement to 2SA1774-Q/R/S
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
and MSL Rating 1
Maximum Ratings @ 25
O
C Unless Otherwise Specified
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
C
T
J
T
STG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Dissipation
Operating Junction Temperature
Storage Temperature
Rating
50
60
7
150
150
-55 to +150
-55 to +150
Unit
V
V
V
mA
mW
SOT-523
A
D
C
B
C
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=1mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=50uAdc, I
E
=0)
Collector-Emitter Breakdown Voltage
(I
E
=50uAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=60Vdc, I
E
=0Vdc)
Emitter Cutoff Current
(V
EB
=7Vdc, I
C
=0Vdc)
DC Current Gain
(I
C
=1mAdc, V
CE
=6Vdc)
Collector-Emitter Saturation Voltage
(I
C
=50mAdc, I
B
=5mAdc)
Transition Frequency
(V
CE
=12Vdc, I
C
=2mAdc, f=100MHz)
Output Capacitance
(V
CB
=12Vdc, f=1.0MHz, I
E
=0)
Q
120-270
BQ
Min
50
60
7
---
---
120
---
---
---
Typ
---
---
---
---
---
---
---
180
2.0
Max
---
---
---
0.1
0.1
560
0.4
---
3.5
Units
Vdc
Vdc
G
H
E
B
E
Vdc
­Adc
­Adc
---
Vdc
MHz
pF
DIM
A
B
C
D
E
G
H
J
K
K
DIMENSIONS
INCHES
MIN
MAX
.059
.067
.030
.033
.057
.069
.020 Nominal
.035
.043
.000
.004
.028
.031
.004
.008
.010
.014
J
Classification OF h
FE
Rank
Range
Marking
R
180-390
BR
S
270-560
BS
MM
MIN
MAX
1.50
1.70
0.75
0.85
1.45
1.75
0.50Nominal
0.90
1.10
.000
.100
.70
0.80
.100
.200
.25
.35
NOTE
www.mccsemi.com
Revision: 5
1 of 3
2008/01/01

2SC4617-S Related Products

2SC4617-S 2SC4617-Q 2SC4617-R
Description Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
Is it Rohs certified? incompatible incompatible incompatible
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3
Reach Compliance Code compli compli compli
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.15 A 0.15 A 0.15 A
Collector-emitter maximum voltage 50 V 50 V 50 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 270 120 180
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 240 240 240
Polarity/channel type NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) TIN LEAD
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature 30 30 30
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 180 MHz 180 MHz 180 MHz
Base Number Matches 1 1 1
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