2SB1188-R datasheet, PDF - EEWORLD Datasheet

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2SB1188-R: DescriptionSmall Signal Bipolar Transistor, 2A I(C), 1-Element, PNP, Silicon, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size232KB，2 Pages; ManufacturerMicro Commercial Components (MCC)

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2SB1188-R Overview

Small Signal Bipolar Transistor, 2A I(C), 1-Element, PNP, Silicon, PLASTIC PACKAGE-3

2SB1188-R Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	SMALL OUTLINE, R-PSSO-F3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	2 A
Configuration	SINGLE
Minimum DC current gain (hFE)	82
JESD-30 code	R-PSSO-F3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	FLAT
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	80 MHz
Base Number Matches	1

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MCC

TM

Micro Commercial Components

omponents

20736 Marilla

Street Chatsworth

!"#

$ % !"#

2SB1188-P

2SB1188-Q

2SB1188-R

PNP

Plastic-Encapsulate

Transistors

•

Features

Power dissipation: P

CM

= 0.5W(T

amb

=25 )

Collector current: I

CM

= -2A

Collector-base voltage: V

(BR)CBO

= -40V

Operating and storage junction temperature range

T

J

, T

stg

: -55 to + 150

Electrical Characteristics @ 25

Symbol

V(BR)

CEO

V(BR)

CBO

V(BR)

EBO

I

CBO

I

EBO

h

FE

V

CE(sat)

f

T

Cob

Unless Otherwise Specified

Min

-32

-40

-5.0

---

82

---

Typ

---

80

---

Max

---

-1.0

390

-0.8

---

65

Unit

V

uA

Parameter

Collector-Emitter Breakdown Voltage

mA, I

B

=0)

(I

C

=-1

Collector-Base Breakdown Voltage

(I

C

=-50A, I

E

=0)

Emitter-Base Breakdown Voltage

(I

E

=-50A, I

C

=0)

Collector cut-off Current

(V

CB

=-20V, I

E

=0)

Emitter cut-off Current

(V

EB

=-4V, I

C

=0)

DC current gain *

(V

CE

=-3V, I

C

=-0.5A)

Collector-Emitter Saturation Voltage*

(I

C

=-2A, I

B

=-0.2A)

Transition Frequency

(V

CE

=-5.0Vdc, I

C

=-0.5Adc,F=30MHZ)

output capacitance

(V

CB

=-10V, I

E

=0, f=1MHz)

SOT-89

A

B

K

E

---

V

MHZ

PF

C

D

G

F

H

J

*

Measured using pulse current.

CLASSIFICATION OF h

FE

Rank

Range

Marking

P

82-180

BCP

Q

120-270

BCQ

R

180-390

BCR

B

C

E

www.mccsemi.com

Revision:

4

1 of 2

2007/07/13

2SB1188-R Related Products

	2SB1188-R	2SB1188-P	2SB1188-Q	2SB1188-R-T
Description	Small Signal Bipolar Transistor, 2A I(C), 1-Element, PNP, Silicon, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 2A I(C), 1-Element, PNP, Silicon, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 2A I(C), 1-Element, PNP, Silicon, PLASTIC PACKAGE-3	Transistor
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
package instruction	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	,
Reach Compliance Code	compli	compli	compli	unknow
JESD-609 code	e0	e0	e0	e0
Terminal surface	TIN LEAD	Tin/Lead (Sn/Pb)	TIN LEAD	Tin/Lead (Sn/Pb)
Base Number Matches	1	1	1	1
Contacts	3	3	3	-
ECCN code	EAR99	EAR99	EAR99	-
Maximum collector current (IC)	2 A	2 A	2 A	-
Configuration	SINGLE	SINGLE	SINGLE	-
Minimum DC current gain (hFE)	82	82	82	-
JESD-30 code	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	-
Number of components	1	1	1	-
Number of terminals	3	3	3	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
Polarity/channel type	PNP	PNP	PNP	-
Certification status	Not Qualified	Not Qualified	Not Qualified	-
surface mount	YES	YES	YES	-
Terminal form	FLAT	FLAT	FLAT	-
Terminal location	SINGLE	SINGLE	SINGLE	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
Transistor component materials	SILICON	SILICON	SILICON	-
Nominal transition frequency (fT)	80 MHz	80 MHz	80 MHz	-

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