2SB1188T100/PQ datasheet, PDF - EEWORLD Datasheet

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2SB1188T100/PQ: Description2A, 32V, PNP, Si, POWER TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size119KB，4 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/; Environmental Compliance

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2SB1188T100/PQ Overview

2A, 32V, PNP, Si, POWER TRANSISTOR

2SB1188T100/PQ Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
package instruction	SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code	compli
Shell connection	COLLECTOR
Maximum collector current (IC)	2 A
Collector-emitter maximum voltage	32 V
Configuration	SINGLE
Minimum DC current gain (hFE)	82
JESD-30 code	R-PSSO-F3
JESD-609 code	e2
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN COPPER
Terminal form	FLAT
Terminal location	SINGLE
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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2SB1188T100/PQ Related Products

	2SB1188T100/PQ	2SB1188T100/PR	2SB1188T100/QR	2SB1188T100PQ	2SB1188T100PR	2SB1188T100QR
Description	2A, 32V, PNP, Si, POWER TRANSISTOR	2A, 32V, PNP, Si, POWER TRANSISTOR	2A, 32V, PNP, Si, POWER TRANSISTOR	Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon,	Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon,	Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon,
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Reach Compliance Code	compli	compli	compli	compli	compli	compli
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	2 A	2 A	2 A	2 A	2 A	2 A
Collector-emitter maximum voltage	32 V	32 V	32 V	32 V	32 V	32 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	82	82	120	82	82	120
JESD-30 code	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3
JESD-609 code	e2	e2	e2	e2	e2	e2
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES
Terminal surface	TIN COPPER	TIN COPPER	TIN COPPER	TIN COPPER	TIN COPPER	TIN COPPER
Terminal form	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	10	10	10	10	10	10
transistor applications	SWITCHING	SWITCHING	SWITCHING	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1	1	1
package instruction	SMALL OUTLINE, R-PSSO-F3	-	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	-
Maximum operating temperature	-	-	150 °C	150 °C	150 °C	150 °C
Nominal transition frequency (fT)	-	-	100 MHz	100 MHz	100 MHz	100 MHz
VCEsat-Max	-	-	0.8 V	0.8 V	0.8 V	0.8 V

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