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BY328/33

Description
DIODE 1500 V, SILICON, RECTIFIER DIODE, Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size113KB,5 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BY328/33 Overview

DIODE 1500 V, SILICON, RECTIFIER DIODE, Rectifier Diode

BY328/33 Parametric

Parameter NameAttribute value
MakerNXP
package instructionO-LADB-W2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-LADB-W2
Maximum non-repetitive peak forward current60 A
Number of components1
Phase1
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1500 V
Maximum reverse recovery time0.5 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL

BY328/33 Related Products

BY328/33 BY328/40 BY328/20 BY328/21 BY328/31 BY328/30 BY328/41 BY328/50
Description DIODE 1500 V, SILICON, RECTIFIER DIODE, Rectifier Diode DIODE 1500 V, SILICON, RECTIFIER DIODE, Rectifier Diode DIODE 1500 V, SILICON, RECTIFIER DIODE, Rectifier Diode DIODE 1500 V, SILICON, RECTIFIER DIODE, Rectifier Diode DIODE 1500 V, SILICON, RECTIFIER DIODE, Rectifier Diode DIODE 1500 V, SILICON, RECTIFIER DIODE, Rectifier Diode DIODE 1500 V, SILICON, RECTIFIER DIODE, Rectifier Diode DIODE 1500 V, SILICON, RECTIFIER DIODE, Rectifier Diode
package instruction O-LADB-W2 O-LADB-W2 O-LADB-W2 O-LADB-W2 O-LADB-W2 O-LADB-W2 O-LADB-W2 O-LADB-W2
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code O-LADB-W2 O-LADB-W2 O-LADB-W2 O-LADB-W2 O-LADB-W2 O-LADB-W2 O-LADB-W2 O-LADB-W2
Maximum non-repetitive peak forward current 60 A 60 A 60 A 60 A 60 A 60 A 60 A 60 A
Number of components 1 1 1 1 1 1 1 1
Phase 1 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2 2
Package body material GLASS GLASS GLASS GLASS GLASS GLASS GLASS GLASS
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 1500 V 1500 V 1500 V 1500 V 1500 V 1500 V 1500 V 1500 V
Maximum reverse recovery time 0.5 µs 0.5 µs 0.5 µs 0.5 µs 0.5 µs 0.5 µs 0.5 µs 0.5 µs
surface mount NO NO NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
Maker NXP - - NXP NXP NXP NXP NXP
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