2SC4618-Q-C datasheet, PDF - EEWORLD Datasheet

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2SC4618-Q-C: DescriptionSmall Signal Bipolar Transistor; CategoryDiscrete semiconductor The transistor; File Size428KB，2 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/

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2SC4618-Q-C Overview

Small Signal Bipolar Transistor

2SC4618-Q-C Parametric

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compli
Maximum collector current (IC)	0.05 A
Collector-emitter maximum voltage	25 V
Configuration	SINGLE
Minimum DC current gain (hFE)	120
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
Base Number Matches	1

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2SC4618

Elektronische Bauelemente

0.05A , 40V

NPN Silicon General Purpose Transistor

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead free

FEATURES

High Voltage and Current.

High DC Current Gain.

Complementary to 2SC4738.

A

M

3

SOT-523

3

Application

General Purpose Amplification.

1

Top View

2

C B

1

2

K

E

L

CLASSIFICATION OF h

FE

Product-Rank

Range

Marking

2SC4618-N

56~120

AN

2SC4618-P

82~180

AP

2SC4618-Q

120~270

AQ

F

G

REF.

A

B

C

D

E

F

D

H

J

Millimeter

Min.

Max.

-

0.1

0.55 REF.

0.1

0.2

-

0.5 TYP.

0.25

0.325

PACKAGE INFORMATION

Package

SOT-523

MPQ

3K

LeaderSize

7’ inch

Millimeter

Min.

Max.

1.5

1.7

1.45

1.75

0.75

0.85

0.7

0.9

1.1

0.15

0.25

REF.

G

H

J

K

L

M

Collector

3

1

Base

Emitter

2

ABSOLUTE MAXIMUM RATINGS

(T

A

= 25°C unless otherwise specified)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction to Ambient

Junction & Storage Temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

R

θJA

T

J

, T

STG

Ratings

40

25

5

50

150

833

150, -55 ~ 150

Unit

V

mA

mW

° /W

C

℃

ELECTRICAL CHARACTERISTICS

(T

A

= 25°C unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage *

Transition frequency

Collector output capacitance

http://www.SeCoSGmbH.com/

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

h

FE

V

CE(sat)

f

T

C

ob

Min.

40

25

5

-

56

-

150

-

Typ.

-

Max.

-

0.5

270

0.3

-

2.2

Unit

V

μA

V

MHz

pF

Test Conditions

I

C

=50μA, I

E

=0

I

C

=1mA, I

B

=0

I

E

=50μA, I

C

=0

V

CB

=24V, I

E

=0

V

EB

= 3V, I

C

=0

V

CE

=6V, I

C

=1mA

I

C

=10mA, I

B

=1mA

V

CE

=6V, I

C

=1mA, f=100MHz

V

CB

=6V, I

E

=0, f=1MHz

Any changes of specification will not be informed individually.

24-Feb-2011 Rev. B

Page 1 of 2

2SC4618-Q-C Related Products

	2SC4618-Q-C	2SC4618-N	2SC4618-N-C	2SC4618-P-C	2SC4618-P	2SC4618-Q	2SC4618-C
Description	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compli	compli	compli	compli	compli	compli	compli
Maximum collector current (IC)	0.05 A	0.05 A	0.05 A	0.05 A	0.05 A	0.05 A	0.05 A
Collector-emitter maximum voltage	25 V	25 V	25 V	25 V	25 V	25 V	25 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	120	56	56	82	82	120	56
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN
surface mount	YES	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz
Base Number Matches	1	1	1	1	1	1	-

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