DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
BYV96 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of April 1982
1996 Jun 07
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Guaranteed avalanche energy
absorption capability
•
Available in ammo-pack.
DESCRIPTION
BYV96 series
Rugged glass package, using a high temperature alloyed construction. This
package is hermetically sealed and fatigue free as coefficients of expansion
of all used parts are matched.
2/3 page
k
(Datasheet)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
BYV96D
BYV96E
V
R
continuous reverse voltage
BYV96D
BYV96E
I
F(AV)
average forward current
PARAMETER
repetitive peak reverse voltage
a
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
CONDITIONS
MIN.
−
−
−
−
MAX.
800
1000
800
1000
1.5
V
V
V
V
A
UNIT
T
tp
= 55
°C;
lead length = 10 mm
see Fig 2;
averaged over any 20 ms period;
see also Fig 6
T
amb
= 55
°C;
PCB mounting (see
Fig.11); see Fig 3;
averaged over any 20 ms period;
see also Fig 6
−
−
0.8
A
I
FRM
I
FSM
repetitive peak forward current
non-repetitive peak forward current
T
tp
= 55
°C;
see Fig 4
T
amb
= 55
°C;
see Fig 5
t = 10 ms half sine wave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
see Fig 7
−
−
−
17
9
35
A
A
A
E
RSM
T
stg
T
j
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
−
−65
−65
10
+175
+175
mJ
°C
°C
1996 Jun 07
2
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
V
(BR)R
PARAMETER
forward voltage
reverse avalanche
breakdown voltage
BYV96D
BYV96E
I
R
reverse current
V
R
= V
RRMmax
;
see Fig 9
V
R
= V
RRMmax
; T
j
= 165
°C;
see Fig 9
t
rr
reverse recovery time
when switched from I
F
= 0.5 A
to I
R
= 1 A; measured at
I
R
= 0.25 A; see Fig 12
f = 1 MHz; V
R
= 0 V; see Fig 10
when switched from I
F
= 1 A to
V
R
≥
30 V and dI
F
/dt =
−1
A/µs;
see Fig.13
CONDITIONS
I
F
= 3 A; T
j
= T
j max
; see Fig 8
I
F
= 3 A; see Fig 8
I
R
= 0.1 mA
900
1100
−
−
−
−
−
−
−
−
MIN.
−
−
TYP.
−
−
BYV96 series
MAX.
1.35
1.60
V
V
UNIT
−
−
1
150
300
V
V
µA
µA
ns
C
d
dI
R
--------
dt
diode capacitance
maximum slope of
reverse recovery current
−
−
40
−
−
6
pF
A/µs
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm,
see Fig.11.
For more information please refer to the
“General Part of associated Handbook”.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
lead length = 10 mm
note 1
VALUE
46
100
UNIT
K/W
K/W
1996 Jun 07
3
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
GRAPHICAL DATA
MGC588
BYV96 series
MGC587
handbook, halfpage
2.0
IF(AV)
(A)
handbook, halfpage
1.2
lead length 10 mm
1.6
IF(AV)
(A)
0.8
1.2
0.8
0.4
0.4
0
0
100
Ttp ( C)
o
0
200
0
100
Tamb (
o
C)
200
a = 1.57; V
R
= V
RRMmax
;
δ
= 0.5.
a = 1.57; V
R
= V
RRMmax
;
δ
= 0.5.
Device mounted as shown in Fig.11.
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MGC585
handbook, full pagewidth
20
IFRM
(A)
16
δ
=
0.05
12
0.1
8
0.2
4
0.5
1
0
10
2
10
1
1
10
10
2
10
3
tp (ms)
10
4
T
tp
= 55°C; R
th j-tp
= 46 K/W.
V
RRMmax
during 1
− δ;
curves include derating for T
j max
at V
RRM
= 1000 V.
Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Jun 07
4
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV96 series
MGC586
handbook, full pagewidth
10
IFRM
(A)
8
δ
=
0.05
6
0.1
4
0.2
2
0.5
1
0
10
2
10
1
1
10
10
2
10
3
tp (ms)
10
4
T
amb
= 55
°C;
R
th j-a
= 100 K/W.
V
RRMmax
during 1
− δ;
curves include derating for T
j max
at V
RRM
= 1000 V.
Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MGC576
MGC583
handbook, halfpage
3
handbook, halfpage
200
P
(W)
a = 3 2.5
2
1.57
1.42
Tj
o
( C)
2
100
1
D
E
0
0
1
IF(AV) (A)
2
0
0
500
VR (V)
1000
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
δ
= 0.5.
Fig.6
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Solid line = V
R
.
Dotted line = V
RRM
;
δ
= 0.5.
Fig.7
Maximum permissible junction temperature
as a function of reverse voltage.
1996 Jun 07
5
京公网安备 11010802033920号
EEWORLD
