BB804
VHF variable capacitance double diode
Rev. 03 — 1 July 2004
Product data sheet
1. Product profile
1.1 General description
The BB804 is a variable capacitance double diode with a common cathode, fabricated in
planar technology and encapsulated in the SOT23 small plastic SMD package.
1.2 Features
s
s
s
s
Selected capacitance range
Small plastic SMD package
C8: 26 pF; ratio: 1.7
Low series resistance.
1.3 Applications
s
Electronic tuning in FM radio applications.
2. Pinning information
Table 1:
Pin
1
2
3
Pinning
Description
anode (a1)
anode (a2)
common cathode
3
1
3
Simplified outline
Symbol
2
1
2
SOT23
sym032
3. Ordering information
Table 2:
Ordering information
Package
Name
BB804
-
Description
plastic surface mounted package; 3 leads
Version
SOT23
Type number
Philips Semiconductors
BB804
VHF variable capacitance double diode
4. Marking
Table 3:
BB804
[1]
* = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
Marking
Marking code
[1]
16*
Type number
5. Limiting values
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
V
R
I
F
T
stg
T
j
continuous reverse voltage
continuous forward current
storage temperature
junction temperature
-
-
−55
−55
18
50
+150
+125
V
mA
°C
°C
Parameter
Conditions
Min
Max
Unit
6. Characteristics
Table 5:
Characteristics
T
j
= 25
°
C unless otherwise specified
Symbol
Per diode
I
R
reverse current
see
Figure 2
V
R
= 16 V
V
R
= 16 V; T
j
= 60
°C
r
s
C
d
diode series
resistance
diode
capacitance
f = 100 MHz
V
R
= 2 V; f = 1 MHz;
see
Figure 1
and
Figure 3
[1]
Parameter
Conditions
Min
Typ
Max
Unit
-
-
-
42
-
-
0.2
-
20
200
-
46.5
nA
nA
Ω
pF
C
d
(
2V
)
----------------
C
d
(
8V
)
[1]
capacitance ratio f = 1 MHz
1.65
-
1.75
V
R
is the value at which C
d
= 38 pF.
9397 750 13386
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 1 July 2004
2 of 7
Philips Semiconductors
BB804
VHF variable capacitance double diode
80
C
d
(pF)
60
mgc815
40
20
0
10
−1
1
V
R
(V)
10
f = 1 MHz; T
j
= 25
°C.
Fig 1. Diode capacitance as a function of reverse voltage; typical values.
10
3
mgc810
10
−3
mlc815
I
R
(nA)
TC
d
(K
−1
)
10
2
10
−4
10
0
20
40
60
80
T
j
(°C)
100
10
−5
10
−1
1
10
V
R
(V)
10
2
Fig 2. Reverse current as a function of junction
temperature; maximum values.
Fig 3. Temperature coefficient of diode capacitance
as a function of reverse voltage; typical values.
9397 750 13386
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 1 July 2004
3 of 7
Philips Semiconductors
BB804
VHF variable capacitance double diode
7. Package outline
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
Fig 4. Package outline.
9397 750 13386
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 1 July 2004
4 of 7
Philips Semiconductors
BB804
VHF variable capacitance double diode
8. Revision history
Table 6:
BB804_3
Modifications:
Revision history
Release date
20040630
Data sheet status
Product data sheet
Change notice
-
Order number
9397 750 13386
Supersedes
BB804_2
Document ID
•
•
The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors
Table 3:
marking code changed.
Product data sheet
-
-
-
9397 750 04717
-
BB804_1
-
BB804_2
BB804_1
19981125
19960503
9397 750 13386
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 1 July 2004
5 of 7
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