If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Voltage on Any Pins except V
R
(referred to V
−
pin)
(Note 2)
(Note 3)
Current through Any Input Pin &
V
R
Pin
Differential Input Voltage
Military and Industrial
Commercial
Storage Temperature Range
36V (Max)
−0.3V (Min)
Maximum Junction Temperature
Thermal Resistance, Junction-to-Ambient (Note 4)
N Package
WM Package
Soldering Information (Soldering, 10 seconds)
N Package
WM Package
ESD Tolerance (Note 5)
150˚C
100˚C
150˚C
260˚C
220˚C
±
1kV
±
20 mA
±
36V
±
32V
−65˚C
≤
T
J
≤
+150˚C
Operating Temperature Range
LM614AI, LM614I, LM614BI
LM614AM, LM614M
LM614C
−40˚C
≤
T
J
≤
+85˚C
−55˚C
≤
T
J
≤
+125˚C
0˚C
≤
T
J
≤
+70˚C
Electrical Characteristics
These specifications apply for V
−
= GND = 0V, V
+
= 5V, V
CM
= V
OUT
= 2.5V, I
R
= 100 µA, FEEDBACK pin shorted to GND,
unless otherwise specified. Limits in standard typeface are for T
J
= 25˚C; limits in
boldface type
apply over the
Operating
Temperature Range
.
Symbol
Parameter
Conditions
Typical
(Note 6)
LM614AM
LM614AI
Limits
(Note 7)
LM614M
LM614BI
LM614I
LM614C
Limits
(Note 7)
I
S
V
S
Total Supply
Current
Supply Voltage Range
R
LOAD
=
∞
,
4V
≤
V
≤
36V (32V for LM614C)
+
Units
450
550
2.2
2.9
46
43
940
1000
2.8
3
36
36
3.5
6.0
3.5
6.0
1000
1070
2.8
3
32
32
5.0
7.0
5.0
7.0
µA max
µA max
V min
V min
V max
V max
mV max
mV max
mV max
mV max
µV/˚C
max
OPERATIONAL AMPLIFIER
V
OS1
V
OS2
V
OS
Over Supply
V
OS
Over V
CM
Average V
OS
Drift
I
B
I
OS
Input Bias Current
Input Offset Current
Average Offset
Drift Current
R
IN
C
IN
e
n
I
n
CMRR
Input Resistance
Input Capacitance
Voltage Noise
Current Noise
Common-Mode
Rejection Ratio
Differential
Common-Mode
Common-Mode Input
f = 100 Hz, Input Referred
f = 100 Hz, Input Referred
V
+
= 30V, 0V
≤
V
CM
≤
(V
+
− 1.8V),
CMRR = 20 log (∆V
CM
/∆V
OS
)
4V
≤
V
+
≤
36V
(4V
≤
V
≤
32V for LM614C)
V
CM
= 0V through V
CM
=
+
1.5
2.0
1.0
1.5
15
10
11
0.2
0.3
4
1800
3800
5.7
74
58
95
90
(V
+
− 1.8V), V
+
= 30V
(Note 7)
25
30
4
5
35
40
4
5
nA max
nA max
nA max
nA max
pA/˚C
MΩ
MΩ
pF
80
75
75
70
dB min
dB min
www.national.com
2
Electrical Characteristics
(Continued)
These specifications apply for V
−
= GND = 0V, V
+
= 5V, V
CM
= V
OUT
= 2.5V, I
R
= 100 µA, FEEDBACK pin shorted to GND,
unless otherwise specified. Limits in standard typeface are for T
J
= 25˚C; limits in
boldface type
apply over the
Operating
Temperature Range
.
Symbol
Parameter
Conditions
Typical
(Note 6)
LM614AM
LM614AI
Limits
(Note 7)
LM614M
LM614BI
LM614I
LM614C
Limits
(Note 7)
OPERATIONAL AMPLIFIER
PSRR
A
V
SR
GBW
V
O1
V
O2
I
OUT
I
SINK
I
SHORT
Power Supply
Rejection Ratio
Open Loop
Voltage Gain
Slew Rate
Gain Bandwidth
Output Voltage
Swing High
Output Voltage
Swing Low
Output Source
Output Sink
Current
Short Circuit Current
4V
≤
V
+
≤
30V, V
CM
= V
+
/2,
PSRR = 20 log (∆V
+
/∆V
OS
)
R
L
= 10 kΩ to GND, V
+
= 30V,
5V
≤
V
OUT
≤
25V
V
+
= 30V (Note 8)
C
L
= 50 pF
R
L
= 10 kΩ to GND
V
+
= 36V (32V for LM614C)
R
L
= 10 kΩ to V
+
V
+
= 36V (32V for LM614C)
V
OUT
= 2.5V, V
+IN
= 0V,
V
−IN
= −0.3V
V
OUT
= 1.6V, V
+IN
= 0V,
V
−IN
= 0.3V
V
OUT
= 0V, V
+IN
= 3V,
V
−IN
= 2V, Source
V
OUT
= 5V, V
+IN
= 2V,
V
−IN
= 3V, Sink
VOLTAGE REFERENCE
V
R
Voltage Reference
(Note 9)
1.244
1.2365
1.2515
(
±
0.6%)
Average Temperature
Drift
Hysteresis
(Note 11)
3.2
µV/˚C
(Note 10)
10
80
1.2191
1.2689
(
±
2.0%)
150
PPM/˚C
max
V min
V max
+
Units
110
100
500
50
80
75
100
40
75
70
94
40
dB min
dB min
V/mV
min
V/µs
MHz
MHz
±
0.70
±
0.65
0.8
0.52
V − 1.4
V
+
− 1.6
V
−
+ 0.8
V + 0.9
25
15
17
9
30
40
30
32
−
±
0.55
±
0.45
±
0.50
±
0.45
V − 1.7
V
+
− 1.9
V
−
+ 0.9
V + 1.0
20
13
14
8
50
60
60
80
−
+
V − 1.8
V
+
− 1.9
V
−
+ 0.95
V + 1.0
16
13
13
8
50
60
70
90
−
+
V min
V min
V max
V max
mA min
mA min
mA min
mA min
mA max
mA max
mA max
mA max
V
R
Change
with Current
V
R(100 µA)
− V
R(17 µA)
V
R(10 mA)
− V
R(100 µA)
(Note 12)
0.05
0.1
1.5
2.0
0.2
0.6
2.5
2.8
1
1.1
5
5.5
0.56
13
7
10
1
1.1
5
5.5
0.56
13
7
10
mV max
mV max
mV max
mV max
Ω
max
Ω
max
mV max
mV max
R
Resistance
V
R
Change
with High V
RO
∆V
R(10
→
0.1 mA)
/9.9 mA
∆V
R(100
→
17 µA)
/83 µA
V
R(Vro
=
Vr)
− V
R(Vro
= 6.3V)
(5.06V between Anode and
FEEDBACK)
3
www.national.com
Electrical Characteristics
(Continued)
These specifications apply for V
−
= GND = 0V, V
+
= 5V, V
CM
= V
OUT
= 2.5V, I
R
= 100 µA, FEEDBACK pin shorted to GND,
unless otherwise specified. Limits in standard typeface are for T
J
= 25˚C; limits in
boldface type
apply over the
Operating
Temperature Range
.
Symbol
Parameter
Conditions
Typical
(Note 6)
LM614AM
LM614AI
Limits
(Note 7)
LM614M
LM614BI
LM614I
LM614C
Limits
(Note 7)
VOLTAGE REFERENCE
V
R
Change with
V Change
+
Units
V
R(V + = 5V)
− V
R(V + = 36V)
(V
+
= 32V for LM614C)
V
R(V +
= 5V)
0.1
0.1
0.01
0.01
22
29
30
1.2
1.3
1
1.5
35
40
1.2
1.3
1
1.5
50
55
mV max
mV max
mV max
mV max
nA max
nA max
µV
RMS
− V
R(V +
= 3V)
I
FB
e
n
FEEDBACK Bias
Current
Voltage Noise
V
ANODE
≤
V
FB
≤
5.06V
BW = 10 Hz to 10 kHz,
V
RO
= V
R
Note 1:
Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the de-
vice beyond its rated operating conditions.
Note 2:
Input voltage above V
+
is allowed.
Note 3:
More accurately, it is excessive current flow, with resulting excess heating, that limits the voltages on all pins. When any pin is pulled a diode drop below
V
−
, a parasitic NPN transistor turns ON. No latch-up will occur as long as the current through that pin remains below the Maximum Rating. Operation is undefined
and unpredictable when any parasitic diode or transistor is conducting.
Note 4:
Junction temperature may be calculated using T
J
= T
A
+ P
D
θ
jA
. The given thermal resistance is worst-case for packages in sockets in still air. For packages
soldered to copper-clad board with dissipation from one comparator or reference output transistor, nominal
θ
jA
are 90˚C/W for the N package, WM package.
Note 5:
Human body model, 100 pF discharged through a 1.5 kΩ resistor.
Note 6:
Typical values in standard typeface are for T
J
= 25˚C; values in
boldface type
apply for the full operating temperature range. These values represent the
most likely parametric norm.
Note 7:
All limits are guaranteed at room temperature (standard type face) or at operating temperature extremes
(bold type face).
Note 8:
Slew rate is measured with op amp in a voltage follower configuration. For rising slew rate, the input voltage is driven from 5V to 25V, and the output voltage
transition is sampled at 10V and
@
20V. For falling slew rate, the input voltage is driven from 25V to 5V, and the output voltage transition is sampled at 20V and 10V.
Note 9:
V
R
is the Cathode-feedback voltage, nominally 1.244V.
Note 10:
Average reference drift is calculated from the measurement of the reference voltage at 25˚C and at the temperature extremes. The drift, in ppm/˚C, is
10
6
•
∆V
R
/(V
R[25˚C]
•
∆T
J
), where
∆V
R
is the lowest value subtracted from the highest, V
R[25˚C]
is the value at 25˚C, and
∆T
J
is the temperature range. This parameter
is guaranteed by design and sample testing.
Note 11:
Hysteresis is the change in V
R
caused by a change in T
J
, after the reference has been “dehysterized”. To dehysterize the reference; that is minimize the
hysteresis to the typical value, cycle its junction temperature in the following pattern, spiraling in toward 25˚C: 25˚C, 85˚C, −40˚C, 70˚C, 0˚C, 25˚C.
Note 12:
Low contact resistance is required for accurate measurement.
Note 13:
A military RETSLM614AMX electrical test specification is available on request. The LM614AMJ/883 can also be procured as a Standard Military Drawing.
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