2SD1664P datasheet, PDF - EEWORLD Datasheet

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2SD1664P: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size113KB，3 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/

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2SD1664P Overview

Transistor

2SD1664P Parametric

Parameter Name	Attribute value
Reach Compliance Code	compli
Base Number Matches	1

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2SD1664

Elektronische Bauelemente

R o H S C o m p lia n t P ro d u c t

NPN Silicon

General Purpose Transistor

Features

SOT-89

Power dissipation

: 0.5 W (Tamb= 25 C)

Collector current

: 1 A

Collector-base voltage

(BR)CBO

: 40 V

Operating & Storage junction Temperature

, T

stg

: -55 C~ +150 C

1.BASE

2.COLLECTOR

3.EMITTER

Dimensions In Millimeters

Symbol

2.900

0.900

Min

1.400

0.320

0.360

0.350

4.400

1.400

2.300

3.940

1.500TYP

3.100

1.100

0.114

0.035

Max

1.600

0.520

0.560

0.440

4.600

1.800

2.600

4.250

Min

0.055

0.013

0.014

0.173

0.055

0.091

0.155

0.060TYP

0.122

0.043

Dimensions In Inches

Max

0.063

0.020

0.022

0.017

0.181

0.071

0.102

0.167

Electrical Characteristics( Tamb=25

C unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Symbol

(BR)CBO

(BR)CEO

(BR)EBO

CBO

EBO

(

sat

)

Test Conditions

Ic= 50

A I

MIN

0.5

390

0.4

150

MHz

TYP

MAX

UNIT

Ic= 1mA I

= 50 A I

= 20 V, I

= 4V, I

= 3V, I

= 0.1A

= 500mA, I

= 50mA

= 5V , I

= 50mA

1MHz

= 10V, I

= 0

Output Capacitance

1MHz

Classification of h

Rank

Range

Marking

82-180

DAP

120-270

DAQ

180-390

DAR

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 3

2SD1664P Related Products

	2SD1664P	2SD1664R
Description	Transistor	Transistor
Reach Compliance Code	compli	compli
Base Number Matches	1	1

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