ruggedized device design, ultra low on-resistance and
cost-effectiveness.
Product Summary
BV
DSS
(V)
20
r
DS(on)
(mΩ)
23
I
D
(A)
5
Pin Assignments
Pin Descriptions
D1
S1
S1
G1
1
2
3
4
8
7
6
5
D2
S2
S2
G2
Pin Name
S1/2
G1/2
D1/2
Description
Source
Gate
Drain
TSSOP-8
Ordering information
A X
Feature
F :MOSFET
PN
9928N X X X
Package
Lead Free
Packing
Blank : Tube or Bulk
A : Tape & Reel
TS: TSSOP-8 Blank : Normal
L : Lead Free Package
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.1 Aug 11, 2005
1/5
AF9928N
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
(Note 1)
, at V
GS
=4.5V
Pulsed Drain Current
(Note 2)
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
at T
A
=25ºC
at T
A
=70ºC
at T
A
=25ºC
Rating
20
±12
5
3.5
25
1
0.008
-55 to 150
-55 to 150
Units
V
V
A
A
W
W/ºC
ºC
ºC
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-Ambient
(Note 1)
2
o
Max.
Value
125
Units
o
C/W
Note 1:
Surface mounted on 1 in copper pad of FR4 board, 208 C/W when mounted on Min. copper pad.
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Embedded System
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