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Datasheet> All Categories > Discrete semiconductor> The transistor> 2SD1664R-TP
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2SD1664R-TP

Description
Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size716KB，2 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
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2SD1664R-TP Overview

Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3

2SD1664R-TP Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage32 V
ConfigurationSINGLE
Minimum DC current gain (hFE)180
JESD-30 codeR-PSSO-F3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
surface mountYES
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Base Number Matches1

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MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

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$ %    !"#
2SD1664
•
•
•
•
•
•
Features
Complements to 2SB1132
Low collector-to-emitter saturation voltage.
Fast switching speed.
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Lead Free Finish/Rohs Compliant ("P"Suffix designates
RoHS
Compliant. See ordering information)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector dissipation
Junction Temperature
Storage Temperature
Rating
32
40
5.0
1.0
500
-55 to +150
-55 to +150
Unit
V
V
V
A
mW
O
C
O
C
NPN Epitaxial
Planar Silicon

Transistors
















































Maximum Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
C
T
J
T
STG
SOT-89
A
B
K
E
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector-Base Breakdown Voltage
(I
C
=50uAdc, I
E
=0)
Collector-Emitter Breakdown Voltage
(I
C
=1.0mAdc)
Collector-Emitter Breakdown Voltage
(I
E
=50uAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=20Vdc,I
E
=0)
Emitter Cutoff Current
(V
EB
=4.0Vdc, I
C
=0)
Min
40
32
5.0
---
---
Typ
---
---
---
---
---
Max
---
---
---
0.5
0.5
Units
Vdc
Vdc
Vdc
uAdc
mAdc
C
D
G
OFF CHARACTERISTICS
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
H
J
F
1
2
3
1. Base
2. Collector
3. Emitter
ON CHARACTERISTICS
h
FE-1
DC Current Gain
(I
C
=100mAdc, V
CE
=3.0Vdc)
82
---
390
---

V
CE(sat)
Collector-Emitter Saturation Voltage
(I
C
=0.5Adc, I
B
=50mAdc)
Gain-Bandwidth product
(V
CE
=5V, I
C
=50mA, f=100MHz )
Out Capacitance
(V
CB
=10V, f=1.0MHz,I
E
=0)
---
---
150
15
0.4
Vdc
f
T
Cob
---
---
MHz
pF











 


 

 




1.55

.061




25

































REF.








hFE
[1]
CLASSIFICATION
Rank
Range
Marking
P
82-180
DAP
Q
120-270
DAQ
R
180-390
DAR
www.mccsemi.com
Revision: A
1 of 2
2011/10/27

2SD1664R-TP Related Products

2SD1664R-TP 2SD1664P-TP 2SD1664Q-TP
Description Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
Is it Rohs certified? conform to conform to conform to
package instruction SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
Contacts 3 3 3
Reach Compliance Code compli compli compli
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 1 A 1 A 1 A
Collector-emitter maximum voltage 32 V 32 V 32 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 180 82 120
JESD-30 code R-PSSO-F3 R-PSSO-F3 R-PSSO-F3
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN
surface mount YES YES YES
Terminal form FLAT FLAT FLAT
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz 150 MHz
Base Number Matches 1 1 1

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